2N6423

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -500 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 35 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6423 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-50mA IEBO Emitter -Base Cutoff Current VBE=- 6V ICEO Collector-Emitter Cutoff Current VCB=- 150V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB=-0.125A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A VBE(sat)-2 Base-Emitter Saturation Voltage IC= -1A; IB=-0.125A hFE-1 DC Current Gain IC=-0.75A; VCE=-2V hFE-2 DC Current Gain IC=-0.75A; VCE= -10V 2N6423 MIN TYP. MAX UNIT -300 V -500 uA -5 mA -1 V -1 V -1.8 V -1.8 V 10 100 30 150 NOTICE： ISC reserves the rights to make changes of the content herein the da...