CD551B

isc Silicon PNP Power Transistor DESCRIPTION ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.8 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ CD551B isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A VBE(sat) Base-Emitter On Voltage IC= -0.5A; VCE= -0.05V ICBO Collector Cutoff Current VCB= -30V; IE= 0 ICEO Emitter Cutoff Current VCE= -30V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -2V CD551B MIN TYP. MAX UNIT -35 V -35 V -5 V -1.0 V -1.5 V -20 μA -100 μA 55 270 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general elec...