2SK4161D

60 V, 100 A, 3.8 mΩ Low RDS(ON) N ch Trench Power MOSFET 2SK4161D Features ● V(BR)DSS ---------------------------------60 V (ID = 100 μA) ● ID -------------------------------------------------------- 100 A ● RDS(ON) ---------- 4.8 mΩ max. (ID = 35 A, VGS = 10 V) ● ● AEC-Q101 Qualified ● 175°C Capability ● Low On Resistance ● ESD Protection Zener on Gate ● 100% Avalanche Tested ● Compliant with RoHS directive Applications ● Electric power Steering (EPS) ● Motor ● DC/DC Converter ● Other Switching Mode Power Supply, SMPS Package TO3P-3L (1) (2) (3) GDS Equivalent circuit (4) D Not to scale D(2)(4) G(1) Absolute Maximum Ratings Unless otherwise specified, TA = 25 °C Parameter Symbol Drain to Source Voltage VDS Gate to Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current IDM Continuous Source Current (Body Diode) IS Pulsed Source Current (Body Diode) ISM Single Pulse Avalanche Energy EAS Power Dissipation PD Operating Junction Temperature TJ Storage Temperature Range TSTG Test conditions TC = 25 °C PW ≤ 100µs Duty cycle ≤ 1 % TC = 25 °C PW ≤ 100µs Duty cycle ≤ 1 % VDD = 20 V, L = 1 mH, IAS =20 A, unclamped, Refer to Figure 1 TC = 25 °C S(3) Rating Unit 60 V ± 20 V 100 A 200 A 100 A 200 A 400 mJ 132 W 175 °C − 55 to 175 °C 2SK4161D – DSE Rev.1.0 SANKEN ELECTRIC CO.,LTD. 1 Dec. 28, 2015 http://www.sanken-ele.co.jp/en 2SK4161D Thermal Characteristics Unless otherwise specified, TA = 25 °C Parameter Symbol ...