N-Channel MOSFET. 2SK4161D Datasheet

2SK4161D MOSFET. Datasheet pdf. Equivalent

2SK4161D Datasheet
Recommendation 2SK4161D Datasheet
Part 2SK4161D
Description N-Channel MOSFET
Feature 2SK4161D; 60 V, 100 A, 3.8 mΩ Low RDS(ON) N ch Trench Power MOSFET 2SK4161D Features ● V(BR)DSS -------------.
Manufacture Sanken
Datasheet
Download 2SK4161D Datasheet




Sanken 2SK4161D
60 V, 100 A, 3.8 mΩ Low RDS(ON)
N ch Trench Power MOSFET
2SK4161D
Features
V(BR)DSS ---------------------------------60 V (ID = 100 μA)
ID -------------------------------------------------------- 100 A
RDS(ON) ---------- 4.8 mΩ max. (ID = 35 A, VGS = 10 V)
AEC-Q101 Qualified
175°C Capability
Low On Resistance
ESD Protection Zener on Gate
100% Avalanche Tested
Compliant with RoHS directive
Applications
Electric power Steering (EPS)
Motor
DC/DC Converter
Other Switching Mode Power Supply, SMPS
Package
TO3P-3L
(1) (2) (3)
GDS
Equivalent circuit
(4)
D
Not to scale
D(2)(4)
G(1)
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Continuous Source Current
(Body Diode)
IS
Pulsed Source Current
(Body Diode)
ISM
Single Pulse Avalanche Energy
EAS
Power Dissipation
PD
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
TC = 25 °C
PW 100µs
Duty cycle 1 %
VDD = 20 V, L = 1 mH,
IAS =20 A, unclamped,
Refer to Figure 1
TC = 25 °C
S(3)
Rating
Unit
60
V
± 20
V
100
A
200
A
100
A
200
A
400
mJ
132
W
175
°C
55 to 175
°C
2SK4161D DSE Rev.1.0
SANKEN ELECTRIC CO.,LTD.
1
Dec. 28, 2015
http://www.sanken-ele.co.jp/en



Sanken 2SK4161D
2SK4161D
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA
Test Conditions
Min. Typ. Max. Unit
1.13 °C/W
35.7 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Breakdown
Voltage
V(BR)DSS
Drain to Source Leakage Current
IDSS
Gate to Source Leakage Current
IGSS
Gate Threshold Voltage
VGS(th)
Static Drain to Source
On-Resistance
RDS(ON)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge (VGS = 10 V)
Qg1
Gate to Source Charge
Qgs
Gate to Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source to Drain Diode Forward
Voltage
VSD
Source to Drain Diode Reverse
Recovery Time
trr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 60 V, VGS = 0 V
VGS = ± 15 V
VDS = 10 V, ID = 1 mA
ID = 35 A, VGS = 10 V
ID = 35 A, VGS = 8 V
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDS = 40 V
ID = 40 A
VDD = 20 V
ID = 40 A
VGS = 10 V, RG = 30 Ω
Refer to Figure 2
IS = 50 A, VGS = 0 V
IF = 25 A
di/dt = 50 A/µs
Refer to Figure 3
Min. Typ. Max. Unit
60
V
100
µA
± 10
µA
3.0
3.6
4.0
V
3.8
4.8
4.2
6.0
10000
1000
pF
730
145
40
nC
35
160
490
ns
400
200
0.9
1.2
V
50
ns
2SK4161D DSE Rev.1.0
SANKEN ELECTRIC CO.,LTD.
2
Dec. 28, 2015



Sanken 2SK4161D
2SK4161D
Test Circuits and Waveforms
RG
VGS
L
ID
VDS
E AS
1
2
L IAS2
V(BR)DSS
V(BR)DSS VDD
VDS
0
VDD
ID
IAS
0V
0
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
V(BR)DSS
VDD
RL
VGS
VGS
VDS
0
RG
VDD
VDS
0V
P.W. = 10 μs
Duty cycle 1 %
(a) Test Circuit
0
td(on) tr
ton
Figure 2 Switching Time
td(off) tf
toff
(b) Waveform
90%
10%
90%
10%
VGS
0V
D.U.T.
RG
IF L
IF
VDD
0
di/dt
trr
IRM × 90 %
IRM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
2SK4161D DSE Rev.1.0
SANKEN ELECTRIC CO.,LTD.
3
Dec. 28, 2015







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