isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=66A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=66A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 12.1mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
66
A
PD
Total Dissipation @TC=25℃
135
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.9
℃/W
EKI10126
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1.5mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=33A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS= 0
VSD
Forward On-Voltage
IS=33A; VGS= 0
EKI10126
MIN MAX UNIT
100
V
1
2.5
V
12.1
mΩ
±100 nA
100
μA
1.5
V
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without no...