isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=50A@ TC=25℃ ·Drain Source Voltage-
: VDSS=50V(Min) ·Static ...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=50A@ TC=25℃ ·Drain Source Voltage-
: VDSS=50V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 15mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
50
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
50
A
PD
Total Dissipation @TC=25℃
85
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.47 ℃/W
EKV550
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.1mA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=25A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=50V; VGS= 0
VSD
Forward On-Voltage
IS=50A; VGS= 0
EKV550
MIN MAX UNIT
250
V
3
4.2
V
15
mΩ
±10 μA
100
μA
1.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T...
