Power MOSFET. FKI06051 Datasheet

FKI06051 MOSFET. Datasheet pdf. Equivalent

FKI06051 Datasheet
Recommendation FKI06051 Datasheet
Part FKI06051
Description Power MOSFET
Feature FKI06051; 60 V, 69 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06051 Features  V(BR)DSS --------------.
Manufacture Sanken
Datasheet
Download FKI06051 Datasheet




Sanken FKI06051
60 V, 69 A, 3.9 mΩ Low RDS(ON)
N ch Trench Power MOSFET
FKI06051
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
ID ---------------------------------------------------------- 69 A
RDS(ON) ----------4.9 mΩ max. (VGS = 10 V, ID = 55.0 A)
Qg------44.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 55.0 A)
Package
TO-220F
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
(1) (2) (3)
s G D S
Design Equivalent circuit
Not to scale
or New Power Supplies
D(2)
G(1)
S(3)
ded f Absolute Maximum Ratings
n Unless otherwise specified, TA = 25 °C
e Parameter
Symbol
m Drain to Source Voltage
VDS
m Gate to Source Voltage
VGS
o Continuous Drain Current
ID
ec Pulsed Drain Current
IDM
R Continuous Source Current
(Body Diode)
IS
t Pulsed Source Current
No (Body Diode)
ISM
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 30 V, L = 1 mH,
Rating
60
± 20
69
137
69
137
Unit
V
V
A
A
A
A
Single Pulse Avalanche Energy
EAS
IAS = 13 A, unclamped,
RG = 4.7 Ω
170
mJ
Refer to Figure 1
Avalanche Current
IAS
30
A
Power Dissipation
PD
TC = 25 °C
42
W
Operating Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
55 to 150
°C
FKI06051-DS Rev.1.5
SANKEN ELECTRIC CO.,LTD.
1
May. 29, 2014
http://www.sanken-ele.co.jp



Sanken FKI06051
FKI06051
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA
Test Conditions
Min. Typ. Max. Unit
3.0 °C/W
62.5 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
s Parameter
Symbol
n Drain to Source Breakdown
ig Voltage
V(BR)DSS
s Drain to Source Leakage Current
IDSS
e Gate to Source Leakage Current
IGSS
D Gate Threshold Voltage
VGS(th)
w Static Drain to Source
e On-Resistance
RDS(ON)
N Gate Resistance
RG
r Input Capacitance
Ciss
o Output Capacitance
Coss
f Reverse Transfer Capacitance
Crss
ed Total Gate Charge (VGS = 10 V)
Qg1
d Total Gate Charge (VGS = 4.5 V)
Qg2
n Gate to Source Charge
Qgs
e Gate to Drain Charge
Qgd
m Turn-On Delay Time
td(on)
m Rise Time
tr
co Turn-Off Delay Time
td(off)
e Fall Time
tf
R Source to Drain Diode Forward
t Voltage
VSD
Source to Drain Diode Reverse
o Recovery Time
trr
N Source to Drain Diode Reverse
Recovery Charge
Qrr
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 60 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 1.5 mA
ID = 55.0 A, VGS = 10 V
ID = 27.5 A, VGS = 4.5 V
f = 1 MHz
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDS = 30 V
ID = 55.0 A
VDS = 30 V
ID = 55.0 A
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
IS = 55.0 A, VGS = 0 V
IF = 55.0 A
di/dt = 100 A/µs
Refer to Figure 3
Min. Typ. Max. Unit
60
V
100
µA
± 100 nA
1.0
2.0
2.5
V
3.9
4.9
4.5
5.8
0.8
Ω
6210
665
pF
425
94.7
44.9
nC
16.0
13.9
10.3
11.3
ns
50.1
24.0
0.9
1.5
V
45.5
ns
56.4
nC
FKI06051-DS Rev.1.5
SANKEN ELECTRIC CO.,LTD.
2
May. 29, 2014



Sanken FKI06051
FKI06051
Test Circuits and Waveforms
L
ID
E AS
1
2
L IAS2
V(BR)DSS
V(BR)DSS VDD
V(BR)DSS
VDS
IAS
RG
VGS
VDD
VDS
VDD
0V
ID
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
Designs (b) Waveform
RL
r New RG
o VGS
d f 0 V
de P.W. = 10 μs
n Duty cycle 1 %
VDS
VDD
VGS
VDS
td(on) tr
ton
me (a) Test Circuit
Figure 2 Switching Time
td(off) tf
toff
(b) Waveform
ecom D.U.T.
R IF L
t IF
No VDD
trr
90%
10%
90%
10%
RG
VGS
0V
di/dt
IRM × 90 %
0V
IRM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
FKI06051-DS Rev.1.5
SANKEN ELECTRIC CO.,LTD.
3
May. 29, 2014







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