Power MOSFET
60 V, 24 A, 17.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06269
Features
V(BR)DSS ---------------------------------...
Description
60 V, 24 A, 17.2 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI06269
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 24 A RDS(ON) -------- 22.6 mΩ max. (VGS = 10 V, ID = 15.8 A) Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A)
Package
TO-220F
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive 100 % UIL Tested RoHS Compliant
Applications
DC-DC converters Synchronous Rectification
(1) (2) (3)
s G D S Design Equivalent circuit
Not to scale
or New Power Supplies
D(2) G(1)
S(3)
ded f Absolute Maximum Ratings
n Unless otherwise specified, TA = 25 °C
e Parameter
Symbol
m Drain to Source Voltage
VDS
m Gate to Source Voltage
VGS
o Continuous Drain Current
ID
ec Pulsed Drain Current
IDM
R Continuous Source Current
(Body Diode)
IS
t Pulsed Source Current No (Body Diode)
ISM
Test conditions
TC = 25 °C PW ≤ 100µs Duty cycle ≤ 1 %
PW ≤ 100µs Duty cycle ≤ 1 % VDD = 30 V, L = 1 mH,
Rating 60 ± 20 24 47
24
47
Unit V V A A
A
A
Single Pulse Avalanche Energy
EAS
IAS = 4.2 A, unclamped, RG = 4.7 Ω
18
mJ
Refer to Figure 1
Avalanche Current
IAS
10
A
Power Dissipation
PD
TC = 25 °C
29
W
Operating Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
− 55 to 150
°C
FKI06269-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
1
May. 29, 2014
http://www.sanken-ele.co.jp
FKI06269
Thermal Characteristi...
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