FKP330C

N-Channel MOS FET FKP330C July. 2007 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy guarantee ■Package---FM100 (TO-3P Full Mold) ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Designs New G (1) D (2) for S (3) ded ■Absolute maximum ratings men Characteristic Drain to Source Voltage om Gate to Source Voltage ec Continuous Drain Current R Pulsed Drain Current tMaximum Power Dissipation NoSingle Pulse Avalanche Energy Symbol VDSS VGSS ID ID(pulse) １) PD EAS ２) Rating 330 ±30 ±30A ±120A 85 (Tc=25°C) 500 (Ta=25°C） Unit V V A A W mJ Avalanche Current IAS 30 A Channel Temperature Tch 150 °C Storage Temperature Tstg －55~150 °C １) PW≤100μs，duty cycle≤１％ ２) VDD=20V,L=1mH，ILp=30A,unclamped,RG=50Ω,See Fig.1 . Sanken Electric Co., Ltd.. http://www.sanken-ele.co.jp/en/ T02-011EA-070614 1/9 N-Channel MOS FET FKP330C July. 2007 Characteristic Electrical characteristics Symbol Test Conditions MIN. (Ta=25°C） Limits Unit TYP. MAX. Drain to Source breakdown Voltage V(BR)DSS ID=100μA,VGS=0V 330 V Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage IGSS IDSS VTH VGS=±30V VDS=330V, VGS=0V VDS=10V, ID=1mA s±100 nA ign100 μA Des 3.0 4.5 V Forward Transconductance Re(Yfs) VDS=10V, ID=15A 23 ew Static Drain to Source On-Resistance RDS(on) ID=15A, VGS=10V N Input Capacitance for Output Capacitance ed Reverse Transfer Capacitance Ciss VDS=25V Coss VGS=0V f=1MHz Crss nd...