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R6047ENZ1 Dataheets PDF



Part Number R6047ENZ1
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet R6047ENZ1 DatasheetR6047ENZ1 Datasheet (PDF)

R6047ENZ1 Nch 600V 47A Power MOSFET Data Sheet lOutline VDSS RDS(on) (Max.) 600V 0.072W TO-247 ID 47A PD 120W (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 BODY DIODE t 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - le lApplication Switching.

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R6047ENZ1 Nch 600V 47A Power MOSFET Data Sheet lOutline VDSS RDS(on) (Max.) 600V 0.072W TO-247 ID 47A PD 120W (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. e 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 BODY DIODE t 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Tube Reel size (mm) - le lApplication Switching Power Supply Tape width (mm) - Type Basic ordering unit (pcs) 450 Taping code C9 Marking R6047ENZ1 o lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V s Continuous drain current Tc = 25°C Tc = 100°C ID *1 47 A ID *1 25.5 A Pulsed drain current ID,pulse *2 141 A b Gate - Source voltage VGSS 20 V Avalanche energy, single pulse EAS *3 1135 mJ Avalanche energy, repetitive EAR *3 1.72 mJ O Avalanche current, repetitive IAR 9.3 A Power dissipation (Tc = 25°C) PD 120 W Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to +150 °C Reverse diode dv/dt dv/dt *4 15 V/ns www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/12 2014.03 - Rev.B R6047ENZ1 lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V Tj = 125°C Values Unit 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient e Soldering temperature, wavesoldering for 10s Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 1.04 °C/W - - 30 °C/W - - 265 °C t lElectrical characteristics (Ta = 25°C) le Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V o Zero gate voltage drain current s Gate - Source leakage current Gate threshold voltage Static drain - source b on - state resistance O Gate input resistance VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = 20V, VDS = 0V VGS (th) VDS = 10V, ID = 1mA VGS = 10V, ID = 25.8A RDS(on) *5 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain - 0.1 100 mA - - 1000 - - 100 nA 2 - 4 V - 0.066 0.072 W - 0.140 - - 0.8 - W www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/12 2014.03 - Rev.B R6047ENZ1 Data Sheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 23.5A 13 26 - S Input capacitance Ciss VGS = 0V - 3850 - Output capacitance Coss VDS = 25V - 2950 - pF Reverse transfer capacitance Crss f = 1MHz - 320 - Effective output capacitance, energy related Effective output capacitance, e time related Co(er) Co(tr) VGS = 0V VDS = 0V to 480V - 140 - pF - 710 - Turn - on delay time t Rise time Turn - off delay time Fall time td(on) *5 VDD ⋍ 300V, VGS = 10V - 50 - tr *5 td(off) *5 ID = 23.5A RL = 12.7W - 100 - ns - 260 - tf *5 RG = 10W - 100 - le lGate Charge characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. o Total gate charge Gate - Source charge s Gate - Drain charge Gate plateau voltage Qg *5 VDD ⋍ 300V - 145 - Qgs *5 ID = 47A - 20 - nC Qgd *5 VGS = 10V - 80 - V(plateau) VDD ⋍ 300V, ID = 47A - 6.2 - V b *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 ID = 9.3A, VDD = 50V O *4 Reference measurement circuits Fig.5-1. *5 Pulsed www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 3/12 2014.03 - Rev.B R6047ENZ1 Data Sheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Inverse diode continuous, forward current IS *1 - - 47 A Tc = 25°C Inverse diode direct current, pulsed Forward voltage Reverse recovery time Reverse recovery charge e Peak reverse recovery current ISM *2 VSD *5 trr *5 Qrr *5 Irrm *5 VGS = 0V, IS = 47A IS = 47A di/dt = 100A/ms - - 141 A - - 1.5 V - 850 - ns - 18 - mC - 45 - A t lTypical Transient Thermal Characteristics Symbol Value Unit le Rth1 0.111 Rth2 0.428 K/W Obso Rth3 0.250 Symbol Cth1 Cth2 Cth3 Value 0.0246 0.539 16.7 Unit Ws/K www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 4/12 2014.03 - Rev.B R6047ENZ1 lElectrical characteristic curves Data Sheet Power Dissipation : PD/PD max. [%] Fig.1 Power Dissipation Derating Curve Fig.2 Normalized Transient Thermal Resistance vs. Pulse Width Normalized Transient Thermal Resistance : r(t) 120 1000 Ta = 25ºC 100 100 Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) 80 60 40 e 20 0 t 0 50 100 150 200 Junction Temperature : Tj [°C] 10 Rth(ch-a) = 30ºC/W 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = .


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