Document
R6047ENZ1
Nch 600V 47A Power MOSFET
Data Sheet
lOutline
VDSS RDS(on) (Max.)
600V 0.072W
TO-247
ID
47A
PD
120W
(1) (2) (3)
lFeatures 1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 20V.
e 4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate (2) Drain (3) Source
*1 BODY DIODE
t 6) Pb-free lead plating ; RoHS compliant
lPackaging specifications Packaging
Tube
Reel size (mm)
-
le lApplication
Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
450
Taping code
C9
Marking
R6047ENZ1
o lAbsolute maximum ratings (Ta = 25°C) Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600
V
s Continuous drain current
Tc = 25°C Tc = 100°C
ID *1
47
A
ID *1
25.5
A
Pulsed drain current
ID,pulse *2
141
A
b Gate - Source voltage
VGSS
20
V
Avalanche energy, single pulse
EAS *3
1135
mJ
Avalanche energy, repetitive
EAR *3
1.72
mJ
O Avalanche current, repetitive
IAR
9.3
A
Power dissipation (Tc = 25°C)
PD
120
W
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
-55 to +150
°C
Reverse diode dv/dt
dv/dt *4
15
V/ns
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1/12
2014.03 - Rev.B
R6047ENZ1 lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
Data Sheet
Symbol
Conditions
dv/dt
VDS = 480V Tj = 125°C
Values Unit 50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient
e Soldering temperature, wavesoldering for 10s
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
-
-
1.04 °C/W
-
-
30 °C/W
-
-
265
°C
t lElectrical characteristics (Ta = 25°C)
le Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
600
-
-
V
o Zero gate voltage
drain current
s Gate - Source leakage current
Gate threshold voltage Static drain - source
b on - state resistance O Gate input resistance
VDS = 600V, VGS = 0V IDSS Tj = 25°C
Tj = 125°C IGSS VGS = 20V, VDS = 0V VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 25.8A RDS(on) *5 Tj = 25°C
Tj = 125°C RG f = 1MHz, open drain
-
0.1 100 mA
-
-
1000
-
-
100 nA
2
-
4
V
- 0.066 0.072 W
-
0.140
-
-
0.8
-
W
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2/12
2014.03 - Rev.B
R6047ENZ1
Data Sheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Transconductance
gfs *5 VDS = 10V, ID = 23.5A
13
26
-
S
Input capacitance
Ciss
VGS = 0V
-
3850
-
Output capacitance
Coss VDS = 25V
-
2950
-
pF
Reverse transfer capacitance
Crss f = 1MHz
-
320
-
Effective output capacitance, energy related
Effective output capacitance,
e time related
Co(er) Co(tr)
VGS = 0V VDS = 0V to 480V
-
140
-
pF
-
710
-
Turn - on delay time
t Rise time
Turn - off delay time Fall time
td(on) *5 VDD ⋍ 300V, VGS = 10V
-
50
-
tr *5 td(off) *5
ID = 23.5A RL = 12.7W
-
100
-
ns
-
260
-
tf *5
RG = 10W
-
100
-
le lGate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
o Total gate charge
Gate - Source charge
s Gate - Drain charge
Gate plateau voltage
Qg *5 VDD ⋍ 300V
-
145
-
Qgs *5
ID = 47A
-
20
-
nC
Qgd *5 VGS = 10V
-
80
-
V(plateau) VDD ⋍ 300V, ID = 47A
-
6.2
-
V
b *1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1% *3 ID = 9.3A, VDD = 50V
O *4 Reference measurement circuits Fig.5-1.
*5 Pulsed
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3/12
2014.03 - Rev.B
R6047ENZ1
Data Sheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Inverse diode continuous, forward current
IS *1
-
-
47
A
Tc = 25°C
Inverse diode direct current, pulsed
Forward voltage Reverse recovery time Reverse recovery charge
e Peak reverse recovery current
ISM *2
VSD *5 trr *5 Qrr *5 Irrm *5
VGS = 0V, IS = 47A
IS = 47A di/dt = 100A/ms
-
-
141
A
-
-
1.5
V
-
850
-
ns
-
18
-
mC
-
45
-
A
t lTypical Transient Thermal Characteristics
Symbol
Value
Unit
le Rth1
0.111
Rth2
0.428
K/W
Obso Rth3
0.250
Symbol Cth1 Cth2 Cth3
Value 0.0246 0.539
16.7
Unit Ws/K
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4/12
2014.03 - Rev.B
R6047ENZ1 lElectrical characteristic curves
Data Sheet
Power Dissipation : PD/PD max. [%]
Fig.1 Power Dissipation Derating Curve
Fig.2 Normalized Transient Thermal Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r(t)
120
1000
Ta = 25ºC
100
100
Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a)
80
60
40
e 20
0
t 0
50
100
150
200
Junction Temperature : Tj [°C]
10 Rth(ch-a) = 30ºC/W
1
0.1
0.01
0.001
0.0001 0.0001 0.001 0.01 0.1
top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = .