Document
RCX511N25
Nch 250V 51A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
250V 65m 51A 84W
Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive
Absolute maximum ratings(Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current Pulsed drain current
Tc = 25°C Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation Junction temperature
Tc = 25°C Ta = 25°C
Range of storage temperature
Outline
TO-220FM
Inner circuit
(1) (2) (3)
(1) Gate
∗1
(2) Drain
(3) Source
1 BODY DIODE
(1)
(2)
(3)
Packaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Bulk -
500 -
RCX511N25
Symbol
Value
Unit
VDSS
250
V
ID *1
51
A
ID *1
27.7
A
ID,pulse *2
204
A
VGSS
30
V
EAS *3
197.9
mJ
IAR *3
25.5
A
PD
84
W
PD
2.23
W
Tj
150
°C
Tstg
55 to 150
°C
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1/12
2016.02 - Rev.B
RCX511N25 Thermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
RthJC RthJA Tsold
Values Unit
Min. Typ. Max.
-
-
1.48 °C/W
-
-
56 °C/W
-
-
265 °C
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA
250
-
VDS = 250V, VGS = 0V
Zero gate voltage drain current
IDSS
-
-
Tj = 25°C
-
V
10
A
Gate - Source leakage current
IGSS VGS = 30V, VDS = 0V
-
-
100 nA
Gate threshold voltage
VGS (th) VDS = 10V, ID = 1mA
3.0
-
5.0
V
Static drain - source on - state resistance
VGS = 10V, ID = 25.5A
-
48
65
RDS(on) *4 VGS = 10V, ID = 25.5A
m
-
110 155
Tj = 125°C
Forward transfer admittance
gfs
VDS = 10V, ID = 25.5A
15
30
-
S
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2/12
2016.02 - Rev.B
RCX511N25
Data Sheet
Electrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Input capacitance Output capacitance
Ciss Coss
VGS = 0V VDS = 25V
-
7000
-
-
350
-
pF
Reverse transfer capacitance
Crss f = 1MHz
-
200
-
Turn - on delay time
td(on) *4 VDD ⋍ 125V, VGS = 10V
-
65
-
Rise time Turn - off delay time
tr *4 td(off) *4
ID = 25.5A RL = 4.7
-
300
-
ns
-
170
-
Fall time
tf *4
RG = 10
-
210
-
Gate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Total gate charge Gate - Source charge Gate - Drain charge
Qg *4 Qgs *4 Qgd *4
VDD ⋍ 125V ID = 51A VGS = 10V
-
120
-
-
40
-
nC
-
40
-
Gate plateau voltage
V(plateau) VDD ⋍ 125V, ID = 51A
-
6.5
-
V
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Continuous source current Pulsed source current Forward voltage Reverse recovery time Reverse recovery charge
IS *1 ISM *2 VSD *4 trr *4 Qrr *4
Tc = 25°C
VGS = 0V, IS = 51A IS = 25.5A di/dt = 100A/s
-
-
51
A
-
-
204
A
-
-
1.5
V
-
175
-
ns
-
1100
-
nC
*1 Limited only by maximum temperature allowed.
*2 Pw 10s, Duty cycle 1% *3 L ⋍ 500H, VDD = 50V, Rg = 25, starting Tj = 25°C
*4 Pulsed
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3/12
2016.02 - Rev.B
RCX511N25 Electrical characteristic curves
Data Sheet
Power Dissipation : PD/PD max. [%]
Fig.1 Power Dissipation Derating Curve
120 100
80 60 40 20
0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [°C]
Drain Current : ID [A]
Fig.2 Maximum Safe Operating Area
1000 100
PW = 100s PW = 1ms
10
Operation in this 1 area is limited
by RDS(on)
0.1
Ta=25ºC Single Pulse
0.01
0.1
1
PW = 10ms
10
100
1000
Drain - Source Voltage : VDS [V]
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
10
Ta=25ºC Single Pulse Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 56ºC/W
1
0.1
0.01 0.0001
0.01
top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single
1
100
Pulse Width : PW [s]
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4/12
2016.02 - Rev.B
RCX511N25 Electrical characteristic curves
Data Sheet
Avalanche Current : IAS [A]
Fig.4 Avalanche Current vs Inductive Load
1000 100
VDD=50V,RG=25 VGF=10V,VGR=0V Starting Tch=25ºC
10
1
0.1 0.01
0.1
1
10
100
Coil Inductance : L [mH]
Avalanche Energy : EAS / EAS max. [%]
Fig.5 Avalanche Energy Derating Curve vs Junction Temperature
120
100
80
60
40
20
0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [°C]
Drain Current : ID [A]
Fig.6 Typical Out.