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RCX511N25 Dataheets PDF



Part Number RCX511N25
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet RCX511N25 DatasheetRCX511N25 Datasheet (PDF)

RCX511N25 Nch 250V 51A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 65m 51A 84W Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive Absolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc =.

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RCX511N25 Nch 250V 51A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 65m 51A 84W Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive Absolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C Range of storage temperature Outline TO-220FM Inner circuit (1) (2) (3) (1) Gate ∗1 (2) Drain (3) Source 1 BODY DIODE (1) (2) (3) Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Bulk - 500 - RCX511N25 Symbol Value Unit VDSS 250 V ID *1 51 A ID *1 27.7 A ID,pulse *2 204 A VGSS 30 V EAS *3 197.9 mJ IAR *3 25.5 A PD 84 W PD 2.23 W Tj 150 °C Tstg 55 to 150 °C www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/12 2016.02 - Rev.B RCX511N25 Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Unit Min. Typ. Max. - - 1.48 °C/W - - 56 °C/W - - 265 °C Electrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 250 - VDS = 250V, VGS = 0V Zero gate voltage drain current IDSS - - Tj = 25°C - V 10 A Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3.0 - 5.0 V Static drain - source on - state resistance VGS = 10V, ID = 25.5A - 48 65 RDS(on) *4 VGS = 10V, ID = 25.5A m - 110 155 Tj = 125°C Forward transfer admittance gfs VDS = 10V, ID = 25.5A 15 30 - S www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/12 2016.02 - Rev.B RCX511N25 Data Sheet Electrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Input capacitance Output capacitance Ciss Coss VGS = 0V VDS = 25V - 7000 - - 350 - pF Reverse transfer capacitance Crss f = 1MHz - 200 - Turn - on delay time td(on) *4 VDD ⋍ 125V, VGS = 10V - 65 - Rise time Turn - off delay time tr *4 td(off) *4 ID = 25.5A RL = 4.7 - 300 - ns - 170 - Fall time tf *4 RG = 10 - 210 - Gate Charge characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Total gate charge Gate - Source charge Gate - Drain charge Qg *4 Qgs *4 Qgd *4 VDD ⋍ 125V ID = 51A VGS = 10V - 120 - - 40 - nC - 40 - Gate plateau voltage V(plateau) VDD ⋍ 125V, ID = 51A - 6.5 - V Body diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous source current Pulsed source current Forward voltage Reverse recovery time Reverse recovery charge IS *1 ISM *2 VSD *4 trr *4 Qrr *4 Tc = 25°C VGS = 0V, IS = 51A IS = 25.5A di/dt = 100A/s - - 51 A - - 204 A - - 1.5 V - 175 - ns - 1100 - nC *1 Limited only by maximum temperature allowed. *2 Pw  10s, Duty cycle  1% *3 L ⋍ 500H, VDD = 50V, Rg = 25, starting Tj = 25°C *4 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/12 2016.02 - Rev.B RCX511N25 Electrical characteristic curves Data Sheet Power Dissipation : PD/PD max. [%] Fig.1 Power Dissipation Derating Curve 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [°C] Drain Current : ID [A] Fig.2 Maximum Safe Operating Area 1000 100 PW = 100s PW = 1ms 10 Operation in this 1 area is limited by RDS(on) 0.1 Ta=25ºC Single Pulse 0.01 0.1 1 PW = 10ms 10 100 1000 Drain - Source Voltage : VDS [V] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25ºC Single Pulse Rth(j-c)(t) = r(t)×Rth(ch-c) Rth(j-c) = 56ºC/W 1 0.1 0.01 0.0001 0.01 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 1 100 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 4/12 2016.02 - Rev.B RCX511N25 Electrical characteristic curves Data Sheet Avalanche Current : IAS [A] Fig.4 Avalanche Current vs Inductive Load 1000 100 VDD=50V,RG=25 VGF=10V,VGR=0V Starting Tch=25ºC 10 1 0.1 0.01 0.1 1 10 100 Coil Inductance : L [mH] Avalanche Energy : EAS / EAS max. [%] Fig.5 Avalanche Energy Derating Curve vs Junction Temperature 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [°C] Drain Current : ID [A] Fig.6 Typical Out.


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