DatasheetsPDF.com

RD3H160SP Dataheets PDF



Part Number RD3H160SP
Manufacturers INCHANGE
Logo INCHANGE
Description P-Channel MOSFET
Datasheet RD3H160SP DatasheetRD3H160SP Datasheet (PDF)

isc P-Channel MOSFET Transistor RD3H160SP FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -45 V VGS Gate-So.

  RD3H160SP   RD3H160SP


Document
isc P-Channel MOSFET Transistor RD3H160SP FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -45 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -16 A IDM Drain Current-Single Pluse -32 A PD Total Dissipation @TC=25℃ 20 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.25 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -16A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -45V; VGS= 0 VSD Forward On-Voltage IS= -16A; VGS= 0 RD3H160SP MIN MAX UNIT -45 V -1 -3 V 50 mΩ ±10 uA -1 μA -1.2 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


RD3H080SP RD3H160SP RD3H200SN


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)