isc N-Channel MOSFET Transistor
RD3L050SN
FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(M...
isc N-Channel MOSFET
Transistor
RD3L050SN
FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 109mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
5
A
IDM
Drain Current-Single Pluse
15
A
PD
Total Dissipation @TC=25℃
15
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 8.33 ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
VSD
Forward On-Voltage
IS= 5A; VGS= 0
RD3L050SN
MIN MAX UNIT
60
V
1
3
V
109
mΩ
±10
uA
1
μA
1.2
V
NOTICE: ISC reserves the rights to make changes of the content herein the data...