RD3S075CN

isc N-Channel MOSFET Transistor RD3S075CN FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 190V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 336mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 190 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7.5 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 52 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.36 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.8A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 190V; VGS= 0 VSD Forward On-Voltage IS= 7.5A; VGS= 0 RD3S075CN MIN MAX UNIT 190 V 0.5 2.5 V 336 mΩ ±100 nA 10 μA 1.5 V NOTICE： ISC reserves the rights to make changes of the conten...