NTR3161NT1G

NTR3161N Power MOSFET 20 V, 3.3 A, Single N−Channel, SOT−23 Features Low RDS(on) Low Gate Charge Low Threshold Voltage Halide−Free This is a Pb−Free Device Applications DC−DC Conversion Battery Management Load/Power Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V Continuous Drain Current (Note 1) TA = 25°C t ≤ 30 s TA = 85°C ID 3.3 2.3 A t ≤ 10 s TA = 25°C 4.0 Power Dissipation (Note 1) Steady State TA = 25°C PD t ≤ 10 s 0.82 W 1.25 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM 6.4 A TJ, Tstg −55 to 150 °C IS 0.65 A TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W Junction−to−Ambient − t ≤ 30 s RqJA 153 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 °C/W 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). http://onsemi.com V(BR)DSS 20 V RDS(on) MAX 50 mW @ 4.5 V 63 m...