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IGBT. SK50DGDL066ETE2 Datasheet

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IGBT. SK50DGDL066ETE2 Datasheet






SK50DGDL066ETE2 IGBT. Datasheet pdf. Equivalent




SK50DGDL066ETE2 IGBT. Datasheet pdf. Equivalent





Part

SK50DGDL066ETE2

Description

IGBT



Feature


SK50DGDL066ETE2 SEMITOP®E2 3-phase bri dge rectifer + brake chopper + 3-phase bridge inverter Engineering Sample SK50 DGDL066ETE2 Target Data Features* • L ow inductive design • Press-Fit conta ct technology • Rugged mounting due t o integrated mounting clamps • Heat t ransfer and insulation through direct c opper bonded aluminium oxide ceramic (D BC) • Trench IGBT3 technolo.
Manufacture

Semikron

Datasheet
Download SK50DGDL066ETE2 Datasheet


Semikron SK50DGDL066ETE2

SK50DGDL066ETE2; gy • Robust and soft switching CAL4F d iode technology • Integrated NTC temp erature sensor • UL recognized file n o. E 63 532 Typical Applications • Mo tor drives • Air conditioning • Aux iliary Inverters Remarks • IGBT1: inv erter IGBT • IGBT2: brake IGBT • Di ode1: rectifier diode • Diode2: APD i nverter • Diode3: FWD brake Absolute Maximum Ratings Symbol Conditions IGB.


Semikron SK50DGDL066ETE2

T 1 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C T s = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C ICRM = 2 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 C Absolute Maximum Ratings Symbol Co nditions IGBT 2 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W /(mK) Tj = 175 °C λpaste=2.5 W/(mK.


Semikron SK50DGDL066ETE2

) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C ICRM = 2 x ICn om VCC = 360 V VGE ≤ 15 V VCES ≤ 6 00 V Tj = 150 °C Absolute Maximum Ra tings Symbol Conditions Diode 1 VRRM IF IF IFnom IFSM i2t Tj Tj = 25 °C λ paste=0.8 W/(mK) Tj = 150 °C λpaste=2 .5 W/(mK) Tj = 150 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 10 ms , sin 180°, Tj = 150 °C 10 ms, sin 18.

Part

SK50DGDL066ETE2

Description

IGBT



Feature


SK50DGDL066ETE2 SEMITOP®E2 3-phase bri dge rectifer + brake chopper + 3-phase bridge inverter Engineering Sample SK50 DGDL066ETE2 Target Data Features* • L ow inductive design • Press-Fit conta ct technology • Rugged mounting due t o integrated mounting clamps • Heat t ransfer and insulation through direct c opper bonded aluminium oxide ceramic (D BC) • Trench IGBT3 technolo.
Manufacture

Semikron

Datasheet
Download SK50DGDL066ETE2 Datasheet




 SK50DGDL066ETE2
SK50DGDL066ETE2
SEMITOP®E2
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK50DGDL066ETE2
Target Data
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench IGBT3 technology
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode
• Diode2: APD inverter
• Diode3: FWD brake
Absolute Maximum Ratings
Symbol Conditions
IGBT 1
VCES
IC
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
ICRM = 2 x ICnom
VCC = 360 V
VGE 15 V
VCES 600 V
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
IGBT 2
VCES
IC
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
ICRM = 2 x ICnom
VCC = 360 V
VGE 15 V
VCES 600 V
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 1
VRRM
IF
IF
IFnom
IFSM
i2t
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 150 °C
λpaste=2.5 W/(mK)
Tj = 150 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
10 ms, sin 180°, Tj = 150 °C
10 ms, sin 180°, Tj = 150 °C
Values
600
58
46
72
57
50
100
-20 ... 20
6
-40 ... 175
Values
600
58
46
72
57
50
100
-20 ... 20
6
-40 ... 175
Values
1600
57
43
69
52
18
350
612
-40 ... 150
Unit
V
A
A
A
A
A
A
V
µs
°C
Unit
V
A
A
A
A
A
A
V
µs
°C
Unit
V
A
A
A
A
A
A
A²s
°C
DGDL-ET
© by SEMIKRON
Rev. 0.2 – 30.04.2020
1




 SK50DGDL066ETE2
SK50DGDL066ETE2
SEMITOP®E2
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK50DGDL066ETE2
Target Data
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench IGBT3 technology
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode
• Diode2: APD inverter
• Diode3: FWD brake
Absolute Maximum Ratings
Symbol Conditions
Diode 2
VRRM
IF
IF
IFnom
IFRM
IFSM
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFRM = 2 x IFnom
10 ms
sin 180°
Tj = 25 °C
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 3
VRRM
IF
IF
IFnom
IFRM
IFSM
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFRM = 2 x IFnom
10 ms
sin 180°
Tj = 25 °C
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Module
It(RMS)
Tstg
Visol
Tterminal at PCB joint = 30 K, per pin
AC, sinusoidal, t = 1 min
Values
600
52
41
61
49
50
100
345
320
-40 ... 175
Values
600
52
41
61
49
50
100
345
320
-40 ... 175
Values
30
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
A
A
°C
Unit
V
A
A
A
A
A
A
A
A
°C
Unit
A
°C
V
DGDL-ET
2
Rev. 0.2 – 30.04.2020
© by SEMIKRON




 SK50DGDL066ETE2
SK50DGDL066ETE2
SEMITOP®E2
3-phase bridge rectifer +
brake chopper + 3-phase
bridge inverter
Engineering Sample
SK50DGDL066ETE2
Target Data
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench IGBT3 technology
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• IGBT1: inverter IGBT
• IGBT2: brake IGBT
• Diode1: rectifier diode
• Diode2: APD inverter
• Diode3: FWD brake
DGDL-ET
© by SEMIKRON
Characteristics
Symbol Conditions
IGBT 1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 0.8 mA
VGE = 0 V, VCE = 600 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V...+15V
Tj = 25 °C
VCC = 300 V
IC = 50 A
VGE = +15/-15 V
RG on = 8.2 Ω
RG off = 8.2 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Eoff
Tj = 150 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Characteristics
Symbol Conditions
IGBT 2
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 0.8 mA
VGE = 0 V, VCE = 600 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V...+15V
Tj = 25 °C
VCC = 300 V
IC = 50 A
VGE = +15/-15 V
RG on = 8.2 Ω
RG off = 8.2 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Eoff
Tj = 150 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Rev. 0.2 – 30.04.2020
min.
5
typ.
1.45
1.65
0.90
0.80
11
17
5.8
3.14
0.2
0.093
270
0
t.b.d.
t.b.d.
0.85
t.b.d.
t.b.d.
1.6
1.14
0.82
max. Unit
1.85
V
2.05
V
1.10
V
1.00
V
15
mΩ
21
mΩ
6.5
V
0.2
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
min.
5
typ.
1.45
1.65
0.90
0.80
11
17
5.8
3.14
0.2
0.093
270
0
t.b.d.
t.b.d.
0.85
t.b.d.
t.b.d.
1.6
1.14
0.82
max. Unit
1.85
V
2.05
V
1.10
V
1.00
V
15
mΩ
21
mΩ
6.5
V
0.1
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
3



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