SKM400GARL066T

SKM400GARL066T SEMITRANS® 5 Trench IGBT Modules SKM400GARL066T Features Homogeneous Si Trench = trenchgate technology VCE(sat) with positive temperature coefficient Integrated NTC temperature sensor UL recognized, file no. E63532 Typical Applications* UPS Inverter Remarks Case temperature limited to Tc=125°C max Reccomended Top=-40..+150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 6.4 mA VGE = 0 V VCE = 600 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C Values 600 504 379 400 800 -20 ... 20 6 -40 ... 175 46 33 50 100 345 -40 ... 175 421 301 400 800 2880 -40 ... 175 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A A A A A °C A °C V min. typ. max. Unit 1.45 1.85 V 1.70 ...