SK75GD06E3ETE2

SK75GD06E3ETE2 SEMITOP®E2 Sixpack Open Emitter Engineering Sample SK75GD06E3ETE2 Target Data Features* Optimized design for superior thermal performance Low inductive design Press-Fit contact technology 650V Trench IGBT3 (E3) Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Motor drives Servo drives Air conditioning Auxiliary Inverters UPS Remarks Recommended Tj,op=-40 ...+150 °C GD-ET © by SEMIKRON Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C IC λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C ICnom ICRM VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse - Diode VRRM IF Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C IF λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IFRM IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj Module It(RMS) , ∆Tterminal at PCB joint = 30 K, per pin Tstg module without TIM Visol AC, sinusoidal, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 75 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 chiplevel Tj = 25 °C Tj = 150 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE(th) VGE = VCE, IC = 1.2 mA ICES VGE = 0 V, VCE = 600 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG VGE = - 15 V...+ 15 V RGint ...