SK100MLI07S5TD1E2

SK100MLI07S5TD1E2 SEMITOP®E2 3-Level NPC SK100MLI07S5TD1E2 Features* Optimized design for superior thermal performance Low inductive design Press-Fit contact technology Split IGBT gates for optimized driving 650V Trench5 IGBT (S5) Rapid switching diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications UPS Energy Storage Systems Solar Remarks* Recommended Tj,op=-40 ...+150 °C IGBTs characteristics are valid for paralleled chips (split gates connected) IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3 Diode5: clamping Diodes D5 & D6 Footnotes 1) Please find further technical information on the SEMIKRON website. Absolute Maximum Ratings Symbol Conditions IGBT1 VCES IC IC ICnom ICRM VGES tpsc Tj IGBT2 VCES IC IC ICnom ICRM VGES tpsc Tj Diode1 VRRM IF IF IFRM IFSM Tj Diode2 VRRM IF IF IFRM IFSM Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 10 ms, sin 180°, Tj = 25 °C Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj...