SK151GB07F3T

SK 151 GB 07F3 T SEMITOP® 3 IGBT module SK 151 GB 07F3 T Features Compact design One screw mounting module Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DBC) 650V Fast Trench3 IGBT technology CAL diode technology Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications* Switching (not for linear use) Inverter Switched mode power supplies UPS Remarks Dynamic measurements set-up: - IGBT switching on external 150A 600V Ultrafast diode - Diode switching on external 20A 600V Trench3 IGBT Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 400 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse - Diode VRRM IF Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C IFnom IFRM IFSM Tj IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 150 °C Module It(RMS) Tstg Visol AC, sinusoidal, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 chiplevel Tj = 25 °C Tj = 150 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE(th) VGE = VCE, IC = 2.4 mA ICES VGE = 0 V, VCE = 650 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG VGE = -15 ... +15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf Eoff VCC = 300 V Tj = 150 °C IC = 150 A RG on = 15 Ω RG off = 15 Ω di/dton = 974 A/µs d...