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SEMiX205MLI07E4 Dataheets PDF



Part Number SEMiX205MLI07E4
Manufacturers Semikron
Logo Semikron
Description IGBT
Datasheet SEMiX205MLI07E4 DatasheetSEMiX205MLI07E4 Datasheet (PDF)

SEMiX205MLI07E4 SEMiX® 5 3-Level NPC IGBT-Module SEMiX205MLI07E4 Features • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Remarks* • Case temperature limited to TC=125°C max • Product reliability res.

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Document
SEMiX205MLI07E4 SEMiX® 5 3-Level NPC IGBT-Module SEMiX205MLI07E4 Features • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Remarks* • Case temperature limited to TC=125°C max • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • For storage and case temperature with TIM see document “TP(HALA P8) SEMiX 5p” Absolute Maximum Ratings Symbol Conditions IGBT1 VCES IC ICnom ICRM VGES tpsc Tj IGBT2 VCES IC ICnom ICRM VGES tpsc Tj Diode1 VRRM IF IFnom IFRM IFSM Tj Diode2 VRRM IF IFnom IFRM IFSM Tj Diode5 VRRM IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICRM = 3 x ICnom VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤650 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICRM = 3 x ICnom VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C module without TIM AC sinus 50Hz, t = 1 min Values 650 262 198 200 600 -20 ... 20 10 -40 ... 175 650 255 193 200 600 -20 ... 20 10 -40 ... 175 650 294 217 200 400 1476 -40 ... 175 650 267 196 200 400 1476 -40 ... 175 650 255 187 200 400 1476 -40 ... 175 300 -40 ... 125 4000 Unit V A A A A V µs °C V A A A A V µs °C V A A A A A °C V A A A A A °C V A A A A A °C A °C V MLI © by SEMIKRON Rev. 3.0 – 08.03.2017 1 SEMiX205MLI07E4 SEMiX® 5 3-Level NPC IGBT-Module SEMiX205MLI07E4 Features • Solderless assembling solution with PressFIT signal pins and screw power terminals • IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature coefficient • Low inductance case • Reliable mechanical design with injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside Remarks* • Case temperature limited to TC=125°C max • Product reliability results are valid for Tjop=150°C • IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • For storage and case temperature with TIM see document “TP(HALA P8) SEMiX 5p” MLI 2 Characteristics Symbol Conditions IGBT1 VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE = VCE, .


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