Document
SEMiX205MLI07E4
SEMiX® 5
3-Level NPC IGBT-Module
SEMiX205MLI07E4
Features
• Solderless assembling solution with PressFIT signal pins and screw power terminals
• IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature
coefficient • Low inductance case • Reliable mechanical design with
injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C max
• Product reliability results are valid for Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • For storage and case temperature with
TIM see document “TP(HALA P8) SEMiX 5p”
Absolute Maximum Ratings
Symbol Conditions
IGBT1 VCES IC
ICnom ICRM VGES
tpsc
Tj IGBT2 VCES IC
ICnom ICRM VGES
tpsc
Tj Diode1 VRRM IF
IFnom IFRM IFSM Tj Diode2 VRRM IF
IFnom IFRM IFSM Tj Diode5 VRRM IF
IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICRM = 3 x ICnom VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤650 V
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICRM = 3 x ICnom VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFRM = 2 x IFnom 10 ms, sin 180°, Tj = 25 °C
module without TIM AC sinus 50Hz, t = 1 min
Values
650 262 198 200 600 -20 ... 20
10
-40 ... 175
650 255 193 200 600 -20 ... 20
10
-40 ... 175
650 294 217 200 400 1476 -40 ... 175
650 267 196 200 400 1476 -40 ... 175
650 255 187 200 400 1476 -40 ... 175
300 -40 ... 125
4000
Unit
V A A A A V
µs
°C
V A A A A V
µs
°C
V A A A A A °C
V A A A A A °C
V A A A A A °C
A °C V
MLI
© by SEMIKRON
Rev. 3.0 – 08.03.2017
1
SEMiX205MLI07E4
SEMiX® 5
3-Level NPC IGBT-Module
SEMiX205MLI07E4 Features
• Solderless assembling solution with PressFIT signal pins and screw power terminals
• IGBT 4 Trench Gate Technology • VCE(sat) with positive temperature
coefficient • Low inductance case • Reliable mechanical design with
injection moulded terminals and reliable internal connections • UL recognized file no. E63532 • NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C max
• Product reliability results are valid for Tjop=150°C
• IGBT1 : outer IGBTs T1 & T4 • IGBT2 : inner IGBTs T2 & T3 • Diode1 : outer diodes D1 & D4 • Diode2 : inner diodes D2 & D3 • Diode5 : clamping diodes D5 & D6 • For storage and case temperature with
TIM see document “TP(HALA P8) SEMiX 5p”
MLI 2
Characteristics
Symbol Conditions
IGBT1 VCE(sat)
VCE0
rCE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
IC = 200 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
Tj = 25 °C Tj = 150 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VGE = VCE, .