SKM300GAR07E3

SKM300GAR07E3 SEMITRANS® 3 Trench IGBT Modules SKM300GAR07E3 Target Data Features VCE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Icnom Fast & soft inverse CAL diodes Insulated copper baseplate using DBC Technology (Direct Copper Bonding) With integrated gate resistor Typical Applications* Electronic welders DC/DC – converter Brake chopper Switched reluctance motor Remarks Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C Use of soft RG necessary Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg module without TIM Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 4.8 mA VGE = 0 V VCE = 650 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f =...