SKiM401MLI07E4

SKiM401MLI07E4 SKiM® 4 IGBT Modules SKiM401MLI07E4 Features IGBT 4 Trench Gate Technology Solder technology VCE(sat) with positive temperature coefficient Low inductance case Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate Pressure contact technology for thermal contacts Spring contact system to attach driver PCB to the control terminals High short circuit capability, self limiting to 6 x IC Integrated temperature sensor Typical Applications* UPS 3 Level Inverter Remarks Case temperature limited to Tc = 125°C max, recommended Top = -40 … +150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse diode IF Tj = 175 °C Ts = 25 °C Ts = 70 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Clamping diode IF Tj = 175 °C Ts = 25 °C Ts = 70 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 6.4 mA VGE = 0 V VCE = 650 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C Values 650 317 250...