SKM600GAL07E3

SKM600GAL07E3 SEMITRANS® 3 Trench IGBT Modules SKM600GAL07E3 Features* VCE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Icnom Fast & soft switching inverse CAL diodes Insulated copper baseplate using DCB Technology (Direct Copper Bonding) With integrated gate resistor Typical Applications Electronic welders DC/DC – converter Brake chopper Switched reluctance motor Remarks Case temperature limited to Tc = 125°C max. Recommended Top = -40 ... +150°C Product reliability results valid for Tj = 150°C Use of soft RG necessary Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg module without TIM Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 9.6 mA VGE = 0 V, VCE = 650 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C ...