eGaN® FET DATASHEET
EPC2022 – Enhancement Mode Power Transistor
VDS , 100 V RDS(on) , 3.2 mΩ ID , 90 A
D G
S
EPC2022...
eGaN® FET DATASHEET
EPC2022 – Enhancement Mode Power
Transistor
VDS , 100 V RDS(on) , 3.2 mΩ ID , 90 A
D G
S
EPC2022
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
UNIT
Drain-to-Source Voltage (Continuous)
100
VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
120
V
ID
Continuous (TA = 25°C, RθJA = 2.5°C/W) Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage VGS Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
90 A
390 6 V -4
-40 to 150 °C
-40 to 150
EPC2022 eGaN® FETs are supplied only in passivated die form with solder bumps. Die Size: 6.05 mm x 2.3 mm
High Speed DC-DC Conversion Motor Drive Industrial Automation Synchronous Rectification Inrush Protection Class-D Audio
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC Thermal Resistance, Junction-to-Case
0.4
RθJB Thermal Resistance, Junction-to-Board
1.1
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
42
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://ep...