IGBT
SK25TMLID12F4TE2
SEMITOP®E2
3-phase 3-Level TNPC
Engineering Sample SK25TMLID12F4TE2 Target Data Features*
• Optimized ...
Description
SK25TMLID12F4TE2
SEMITOP®E2
3-phase 3-Level TNPC
Engineering Sample SK25TMLID12F4TE2 Target Data Features*
Optimized design for superior thermal performance
Low inductive design Press-Fit contact technology 1200V Trench IGBT4 Fast (F4) 650V Trench IGBT3 (E3) Robust and soft switching CAL4F
diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532
Typical Applications
UPS Solar
Remarks*
Recommended Tjop= -40 ... +150°C IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer Diodes D1 & D4 Diode2: inner Diodes D2 & D3
Absolute Maximum Ratings
Symbol Conditions
IGBT1 VCES IC
IC
ICnom ICRM VGES tpsc Tj IGBT2 VCES IC
IC
ICnom ICRM VGES tpsc Tj Diode1 VRRM IF
IF
IFRM IFSM Tj Diode2 VRRM IF
IF
IFRM IFSM Tj Module It(RMS) Tstg Visol
Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V
Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
VCC = 360 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 650 V
Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
10 ms, sin 180°, Tj = 25 °C
∆Tterminal at PCB joint = 30 K, per pin AC, sinusoidal, t = 1 ...
Similar Datasheet
- SK25TMLID12F4TE2 IGBT - Semikron