SEMiX155GD12T4

SEMiX155GD12T4 SEMiX® 5 Trench IGBT Modules Evaluation Sample SEMiX155GD12T4 Target Data Features Solderless assembling solution with PressFIT signal pins and screw power terminals IGBT 4 Trench Gate Technology VCE(sat) with positive temperature coefficient Low inductance case Reliable mechanical design with injection moulded terminals and reliable internal connections UL recognized file no. E63532 NTC temperature sensor inside Typical Applications* AC inverter drives UPS Electronic Welding Remarks Product reliability results are valid for Tjop=150°C Dynamic data are estimated For storage and case temperature with TIM see document “TP(HALA P8) SEMiX 5p” GD © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol module without TIM AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 6 mA VGE = 0 V, VCE = 1200 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 1...