SEMiX205GARL07E3

SEMiX205GARL07E3 SEMiX® 5 Trench IGBT Modules Engineering Sample SEMiX205GARL07E3 Target Data Features Solderless assembling solution with PressFIT signal pins and screw power terminals IGBT Trench Gate Technology VCE(sat) with positive temperature coefficient Low inductance case Reliable mechanical design with injection moulded terminals and reliable internal connections UL recognized file no. E63532 NTC temperature sensor inside Typical Applications* UPS 3 Level Inverters Remarks Case temperature limited to TC=125° max. Product reliability results are valid for Tjop=150°C Dynamic data are estimated For storage and case temperature with TIM see document “TP(HALA P8) SEMiX 5p” Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg module without TIM Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C ...