IGBT
SEMiX205GARL07E3
SEMiX® 5
Trench IGBT Modules
Engineering Sample SEMiX205GARL07E3 Target Data Features
• Solderless ass...
Description
SEMiX205GARL07E3
SEMiX® 5
Trench IGBT Modules
Engineering Sample SEMiX205GARL07E3 Target Data Features
Solderless assembling solution with PressFIT signal pins and screw power terminals
IGBT Trench Gate Technology VCE(sat) with positive temperature
coefficient Low inductance case Reliable mechanical design with
injection moulded terminals and reliable internal connections UL recognized file no. E63532 NTC temperature sensor inside
Typical Applications*
UPS 3 Level Inverters
Remarks
Case temperature limited to TC=125° max.
Product reliability results are valid for Tjop=150°C
Dynamic data are estimated For storage and case temperature with
TIM see document “TP(HALA P8) SEMiX 5p”
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 3xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
module without TIM
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint
IC = 200 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C ...
Similar Datasheet
- SEMiX205GARL07E3 IGBT - Semikron