SEMiX205MLI12E4V2

SEMiX205MLI12E4V2 SEMiX® 5 3-Level NPC IGBT-Module SEMiX205MLI12E4V2 Features* Solderless assembling solution with PressFIT signal pins and screw power terminals IGBT 4 Trench Gate Technology VCE(sat) with positive temperature coefficient Low inductance case Reliable mechanical design with injection moulded terminals and reliable internal connections UL recognized file no. E63532 NTC temperature sensor inside Typical Applications Solar, Power Supply Remarks* Case temperature limited to TC=125°C max. Product reliability results valid for Tj ≤150°C (recommended Tj,op= -40…+150°C) IGBT1: outer IGBTs T1 & T4 IGBT2: inner IGBTs T2 & T3 Diode1: outer diodes D1 & D4 Diode2: inner diodes D2 & D3 Diode5: clamping diodes D5 & D6 For storage and case temperature with TIM see document “TP(HALA P8) SEMiX 5p” Footnotes 1) Please find further technical information on the SEMIKRON website. Absolute Maximum Ratings Symbol Conditions IGBT1 VCES IC ICnom ICRM VGES tpsc Tj IGBT2 VCES IC ICnom ICRM VGES tpsc Tj Diode1 VRRM IF IFRM IFSM Tj Diode2 VRRM IF IFRM IFSM Tj Diode5 VRRM IF IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 10 ms, sin 180°, Tj = 25 °C Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 10 ms, sin 180°, Tj = 25 ...