DatasheetsPDF.com

SEMiX404GB17E4s Dataheets PDF



Part Number SEMiX404GB17E4s
Manufacturers Semikron
Logo Semikron
Description IGBT
Datasheet SEMiX404GB17E4s DatasheetSEMiX404GB17E4s Datasheet (PDF)

SEMiX404GB17E4s SEMiX® 4s SEMiX404GB17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 2,35 Ω RGoff,main = 2,35 Ω RG,X.

  SEMiX404GB17E4s   SEMiX404GB17E4s


Document
SEMiX404GB17E4s SEMiX® 4s SEMiX404GB17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 2,35 Ω RGoff,main = 2,35 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 16 mA VGE = 0 V VCE = 1700 V Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 400 A VGE = +15/-15 V RG on = 3 Ω RG off = 3 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 7380 A/µs Tj = 150 °C di/dtoff = 2040 A/µs du/dt = 4950 V/µs Tj = 150 °C Ls = 30 nH Values 1700 633 490 400 1200 -20 ... 20 10 -40 ... 175 1700 412 303 400 800 2340 -40 ... 175 600 -40 ... 125 4000 Unit V A A A A V µs °C V A A A A A °C A °C V min. typ. max. Unit 1.90 2.20 V 2.30 2.60 V 0.8 0.9 V 0.7 0.8 V 2.8 3.3 mΩ 4 4.5 mΩ 5.2 5.8 6.4 V 5 mA mA 36 nF 1.36 nF 1.16 nF 3200 nC 1.88 Ω 390 ns 55 ns 190 mJ 910 ns 170 ns 165 mJ GB © by SEMIKRON Rev. 2 – 20.02.2015 1 SEMiX404GB17E4s SEMiX® 4s SEMiX404GB17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 2,35 Ω RGoff,main = 2,35 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) Conditions VCC = 900 V Tj = 150 °C IC = 400 A VGE = +15/-15 V RG on = 3 Ω RG off = 3 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 4100 A/µs Tj = 150 °C di/dtoff = 1700 A/µs du/dt = 4100 V/µs Tj = 150 °C Ls = 80 nH per IGBT min. typ. max. Unit 430 ns 100 ns 90 mJ 860 ns 200 ns 136 mJ 0.062 K/W Characteristics Symbol Conditions Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 5870 A/µs VGE = -15 V Tj = 150 °C VR = 1200 V Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 3600 A/µs VGE = -15 V Tj = 150 °C VR = 900 V Tj = 150 °C per diode Module LCE RCC'+EE' res. terminal-chip TC = 25 °C TC = 125 °C Rth(c-s) per module Ms to heat sink (M5) Mt to terminals (M6) min. 1.16 1.4 3 2.5 typ. 2.00 2.15 1.32 1.08 1.7 2.7 400 140 97 360 140 85 22 0.95 1.4 0.03 max. 2.40 2.57 1.56 1.22 2.1 3.4 0.145 5 5 w Temperature Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 400 493 ± 5% 3550 ±2% Unit V V V V mΩ mΩ A µC mJ A µC mJ K/W nH mΩ mΩ K/W Nm Nm Nm g Ω K GB 2 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX404GB17E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 20.02.2015 3 SEMiX404GB17E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 – 20.02.2015 © by SEMIKRON SEMiX404GB17E4s SEMiX 4s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application.


SEMiX303GB17E4s SEMiX404GB17E4s SEMiX453GB12E4I33p


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)