Document
SEMiX404GB17E4s
SEMiX® 4s
SEMiX404GB17E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognized, file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
• Dynamic values apply to the following combination of resistors: RGon,main = 2,35 Ω RGoff,main = 2,35 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
IC = 400 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
Tj = 25 °C Tj = 150 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 16 mA
VGE = 0 V VCE = 1700 V
Tj = 25 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V IC = 400 A VGE = +15/-15 V RG on = 3 Ω RG off = 3 Ω
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 7380 A/µs Tj = 150 °C di/dtoff = 2040 A/µs
du/dt = 4950 V/µs Tj = 150 °C Ls = 30 nH
Values
1700 633 490 400 1200 -20 ... 20
10
-40 ... 175
1700 412 303 400 800 2340 -40 ... 175
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
V A A A A A °C
A °C V
min.
typ.
max. Unit
1.90
2.20
V
2.30
2.60
V
0.8
0.9
V
0.7
0.8
V
2.8
3.3
mΩ
4
4.5
mΩ
5.2
5.8
6.4
V
5
mA
mA
36
nF
1.36
nF
1.16
nF
3200
nC
1.88
Ω
390
ns
55
ns
190
mJ
910
ns
170
ns
165
mJ
GB
© by SEMIKRON
Rev. 2 – 20.02.2015
1
SEMiX404GB17E4s
SEMiX® 4s
SEMiX404GB17E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognized, file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
• Dynamic values apply to the following combination of resistors: RGon,main = 2,35 Ω RGoff,main = 2,35 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω
Characteristics
Symbol td(on) tr Eon td(off) tf
Eoff
Rth(j-c)
Conditions
VCC = 900 V
Tj = 150 °C
IC = 400 A VGE = +15/-15 V RG on = 3 Ω RG off = 3 Ω
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 4100 A/µs Tj = 150 °C
di/dtoff = 1700 A/µs
du/dt = 4100 V/µs Tj = 150 °C
Ls = 80 nH
per IGBT
min.
typ.
max. Unit
430
ns
100
ns
90
mJ
860
ns
200
ns
136
mJ
0.062 K/W
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 400 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr Err IRRM Qrr Err Rth(j-c)
chiplevel
Tj = 25 °C Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 5870 A/µs VGE = -15 V
Tj = 150 °C
VR = 1200 V
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 3600 A/µs VGE = -15 V
Tj = 150 °C
VR = 900 V
Tj = 150 °C
per diode
Module
LCE RCC'+EE'
res. terminal-chip TC = 25 °C TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink (M5)
Mt
to terminals (M6)
min. 1.16 1.4
3 2.5
typ.
2.00 2.15 1.32 1.08 1.7 2.7 400 140 97 360 140 85
22 0.95 1.4 0.03
max. 2.40 2.57 1.56 1.22 2.1 3.4
0.145
5 5
w
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
400
493 ± 5% 3550 ±2%
Unit
V V V V mΩ mΩ A µC mJ A µC mJ K/W
nH mΩ mΩ K/W Nm Nm Nm
g
Ω
K
GB 2
Rev. 2 – 20.02.2015
© by SEMIKRON
SEMiX404GB17E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 20.02.2015
3
SEMiX404GB17E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 20.02.2015
© by SEMIKRON
SEMiX404GB17E4s
SEMiX 4s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application.