IGBT
SEMiX453GB12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX453GB12E4p Features*
• Homogeneous Si • Trench = Trenchgate technolo...
Description
SEMiX453GB12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX453GB12E4p Features*
Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature
coefficient High short circuit capability Press-fit pins as auxiliary contacts UL recognized, file no. E63532
Typical Applications
AC inverter drives UPS Renewable energy systems
Remarks
Product reliability results are valid for Tj=150°C
Visol between temperature sensor and power section is only 2500V
For storage and case temperature with TIM see document “TP(*) SEMiX 3p”
GB © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
module without TIM AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
Rth(j-c) Rth(c-s)
Rth(c-s)
IC = 450 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE = VCE, IC = 18 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 450 A VGE = +15/-15 V RG on = 1.1 Ω RG off = 1.1...
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