Document
SEMiX603GB12E4I25p
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX603GB12E4I25p Features*
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no. E63532
Typical Applications
• AC inverter drives • UPS • Renewable energy systems
Remarks
• Product reliability results are valid for Tj=150°C
• Visol between temperature sensor and power section is only 2500V
• For storage and case temperature with TIM see document “TP(*) SEMiX 3p”
GB + shunt © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tc = 80°C
Tstg
module without TIM
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
Rth(j-c) Rth(c-s)
Rth(c-s)
IC = 600 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE = VCE, IC = 22.2 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 600 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 6800 A/µs Tj = 150 °C
di/dtoff = 3700 A/µs
dv/dt = 3400 V/µs Tj = 150 °C
Ls = 21 nH
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change material
Rev. 1.0 – 28.02.2020
Values
1200 1110 853 600 1800 -20 ... 20
10
-40 ... 175
1200 856 640 600 1200 3456 -40 ... 175
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
V A A A A A °C
A °C V
min. 5.3
typ.
1.80 2.03 0.87 0.77 1.55 2.1 5.8
37.5 2.31 2.04 3450 1.2 260 85 63 560 145
80
0.035
0.025
max. Unit
2.05
V
2.30
V
1.01
V
0.90
V
1.73 mΩ
2.3
mΩ
6.3
V
5
mA
nF
nF
nF
nC
Ω ns ns mJ ns ns
mJ
0.037 K/W K/W
K/W
1
SEMiX603GB12E4I25p
SEMiX® 3p shunt
Trench IGBT Modules
SEMiX603GB12E4I25p
Features*
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no. E63532
Typical Applications
• AC inverter drives • UPS • Renewable energy systems
Remarks
• Product reliability results are valid for Tj=150°C
• Visol between temperature sensor and power section is only 2500V
• For storage and case temperature with TIM see document “TP(*) SEMiX 3p”
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 600 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr Err Rth(j-c)
chiplevel
Tj = 25 °C Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 6500 A/µs VGE = -15 V VCC = 600 V
Tj = 150 °C Tj = 150 °C
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Rth(c-s)
per diode, pre-applied phase change material
Module LCE RCC'+EE'
Rth(c-s)1 Rth(c-s)2
Rth(c-s)2 Ms Mt
measured per switch, shunt excluded
TC = 25 °C TC = 125 °C
calculated without thermal coupling including thermal coupling, Ts underneath module (λgrease=0.81 W/ (m*K))
including thermal coupling, Ts underneath module, pre-applied phase change material
to heat sink (M5)
to terminals (M6)
min.
3 3
typ.
2.08 2.08 1.39 1.08 1.16 1.67 465 108 40
0.039 0.031
20 0.95 1.25 0.009
0.015
0.011
max. 2.44 2.34 1.59 1.18 1.42 1.93
0.065
6 6
w
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
350
493 ± 5% 3550 ±2%
Unit
V V V V mΩ mΩ A µC mJ K/W K/W K/W
nH mΩ mΩ K/W
K/W
K/W
Nm Nm Nm
g
Ω K
Characteristics
Symbol Conditions
Shunt RShunt α TShunt Rth(r-c) PShunt
Tolerance = ±1 %, Tc = 20°C Tc = 80 °C
min.
typ.
max. Unit
0.26
mΩ
50 ppm/K
170
°C
2
K/W
45
W
GB + shunt 2
Rev. 1.0 – 28.02.2020
© by SEMIKRON
SEMiX603GB12E4I25p
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 28.02.2020
3
SEMiX603GB12E4I25p
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 1.