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SEMiX603GB12E4I25p Dataheets PDF



Part Number SEMiX603GB12E4I25p
Manufacturers Semikron
Logo Semikron
Description IGBT
Datasheet SEMiX603GB12E4I25p DatasheetSEMiX603GB12E4I25p Datasheet (PDF)

SEMiX603GB12E4I25p SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4I25p Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no. E63532 Typical Applications • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol betwe.

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SEMiX603GB12E4I25p SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4I25p Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no. E63532 Typical Applications • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V • For storage and case temperature with TIM see document “TP(*) SEMiX 3p” GB + shunt © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tc = 80°C Tstg module without TIM Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(c-s) Rth(c-s) IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = VCE, IC = 22.2 mA VGE = 0 V, VCE = 1200 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V Tj = 150 °C IC = 600 A VGE = +15/-15 V RG on = 1.5 Ω RG off = 1.5 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 6800 A/µs Tj = 150 °C di/dtoff = 3700 A/µs dv/dt = 3400 V/µs Tj = 150 °C Ls = 21 nH per IGBT per IGBT (λgrease=0.81 W/(m*K)) per IGBT, pre-applied phase change material Rev. 1.0 – 28.02.2020 Values 1200 1110 853 600 1800 -20 ... 20 10 -40 ... 175 1200 856 640 600 1200 3456 -40 ... 175 600 -40 ... 125 4000 Unit V A A A A V µs °C V A A A A A °C A °C V min. 5.3 typ. 1.80 2.03 0.87 0.77 1.55 2.1 5.8 37.5 2.31 2.04 3450 1.2 260 85 63 560 145 80 0.035 0.025 max. Unit 2.05 V 2.30 V 1.01 V 0.90 V 1.73 mΩ 2.3 mΩ 6.3 V 5 mA nF nF nF nC Ω ns ns mJ ns ns mJ 0.037 K/W K/W K/W 1 SEMiX603GB12E4I25p SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4I25p Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no. E63532 Typical Applications • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V • For storage and case temperature with TIM see document “TP(*) SEMiX 3p” Characteristics Symbol Conditions Inverse diode VF = VEC IF = 600 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 6500 A/µs VGE = -15 V VCC = 600 V Tj = 150 °C Tj = 150 °C per diode Rth(c-s) per diode (λgrease=0.81 W/(m*K)) Rth(c-s) per diode, pre-applied phase change material Module LCE RCC'+EE' Rth(c-s)1 Rth(c-s)2 Rth(c-s)2 Ms Mt measured per switch, shunt excluded TC = 25 °C TC = 125 °C calculated without thermal coupling including thermal coupling, Ts underneath module (λgrease=0.81 W/ (m*K)) including thermal coupling, Ts underneath module, pre-applied phase change material to heat sink (M5) to terminals (M6) min. 3 3 typ. 2.08 2.08 1.39 1.08 1.16 1.67 465 108 40 0.039 0.031 20 0.95 1.25 0.009 0.015 0.011 max. 2.44 2.34 1.59 1.18 1.42 1.93 0.065 6 6 w Temperature Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 350 493 ± 5% 3550 ±2% Unit V V V V mΩ mΩ A µC mJ K/W K/W K/W nH mΩ mΩ K/W K/W K/W Nm Nm Nm g Ω K Characteristics Symbol Conditions Shunt RShunt α TShunt Rth(r-c) PShunt Tolerance = ±1 %, Tc = 20°C Tc = 80 °C min. typ. max. Unit 0.26 mΩ 50 ppm/K 170 °C 2 K/W 45 W GB + shunt 2 Rev. 1.0 – 28.02.2020 © by SEMIKRON SEMiX603GB12E4I25p Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1.0 – 28.02.2020 3 SEMiX603GB12E4I25p Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 1.


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