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SEMiX603GB12E4SiCp Dataheets PDF



Part Number SEMiX603GB12E4SiCp
Manufacturers Semikron
Logo Semikron
Description IGBT
Datasheet SEMiX603GB12E4SiCp DatasheetSEMiX603GB12E4SiCp Datasheet (PDF)

SEMiX603GB12E4SiCp SEMiX® 3p Trench IGBT Modules SEMiX603GB12E4SiCp Features • With Silicon Carbide (SiC) Schottky diodes • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and .

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SEMiX603GB12E4SiCp SEMiX® 3p Trench IGBT Modules SEMiX603GB12E4SiCp Features • With Silicon Carbide (SiC) Schottky diodes • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V • RG off must be at least 16Ω in case VCC ≥ 900V • For storage and case temperature with TIM see document “TP(*) SEMiX 3p” GB © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj tp = 8.3 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol module without TIM AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(c-s) Rth(c-s) IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 22.2 mA VGE = 0 V, VCE = 1200 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V Tj = 150 °C IC = 600 A VGE = +15/-15 V RG on = 1.1 Ω RG off = 1.1 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 7550 A/µs Tj = 150 °C di/dtoff = 4220 A/µs du/dt = 3450 V/µs Tj = 150 °C Ls = 21 nH per IGBT per IGBT (λgrease=0.81 W/(m*K)) per IGBT, pre-applied phase change material Rev. 1.0 – 09.04.2018 Values 1200 1110 853 600 1200 -20 ... 20 10 -40 ... 175 1200 404 306 300 900 994 -40 ... 175 600 -40 ... 125 4000 Unit V A A A A V µs °C V A A A A A °C A °C V min. 5.3 typ. 1.80 2.03 0.87 0.77 1.55 2.1 5.8 37.5 2.31 2.04 3450 1.2 145 68 17 520 130 72 0.035 0.025 max. Unit 2.05 V 2.30 V 1.01 V 0.9 V 1.73 mΩ 2.3 mΩ 6.3 V 5 mA nF nF nF nC Ω ns ns mJ ns ns mJ 0.037 K/W K/W K/W 1 SEMiX603GB12E4SiCp SEMiX® 3p Trench IGBT Modules SEMiX603GB12E4SiCp Features • With Silicon Carbide (SiC) Schottky diodes • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V • RG off must be at least 16Ω in case VCC ≥ 900V • For storage and case temperature with TIM see document “TP(*) SEMiX 3p” Characteristics Symbol Conditions Inverse diode VF = VEC IF = 300 A VGE = 0 V chiplevel Tj = 25 °C Tj = 1.



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