Document
SEMiX603GB12E4SiCp
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12E4SiCp Features
• With Silicon Carbide (SiC) Schottky diodes
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no. E63532
Typical Applications*
• AC inverter drives • UPS • Renewable energy systems
Remarks
• Product reliability results are valid for Tj=150°C
• Visol between temperature sensor and power section is only 2500V
• RG off must be at least 16Ω in case VCC ≥ 900V
• For storage and case temperature with TIM see document “TP(*) SEMiX 3p”
GB © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 2xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
tp = 8.3 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
module without TIM AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
Rth(j-c) Rth(c-s)
Rth(c-s)
IC = 600 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 22.2 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 600 A VGE = +15/-15 V RG on = 1.1 Ω RG off = 1.1 Ω
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 7550 A/µs Tj = 150 °C
di/dtoff = 4220 A/µs
du/dt = 3450 V/µs Tj = 150 °C
Ls = 21 nH
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change material
Rev. 1.0 – 09.04.2018
Values
1200 1110 853 600 1200 -20 ... 20
10
-40 ... 175
1200 404 306 300 900 994 -40 ... 175
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
V A A A A A °C
A °C V
min. 5.3
typ.
1.80 2.03 0.87 0.77 1.55 2.1 5.8
37.5 2.31 2.04 3450 1.2 145 68 17 520 130
72
0.035
0.025
max. Unit
2.05
V
2.30
V
1.01
V
0.9
V
1.73 mΩ
2.3
mΩ
6.3
V
5
mA
nF
nF
nF
nC
Ω ns ns mJ ns ns
mJ
0.037 K/W K/W
K/W
1
SEMiX603GB12E4SiCp
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12E4SiCp
Features
• With Silicon Carbide (SiC) Schottky diodes
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no. E63532
Typical Applications*
• AC inverter drives • UPS • Renewable energy systems
Remarks
• Product reliability results are valid for Tj=150°C
• Visol between temperature sensor and power section is only 2500V
• RG off must be at least 16Ω in case VCC ≥ 900V
• For storage and case temperature with TIM see document “TP(*) SEMiX 3p”
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 1.
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