SKM25GAH125D

SKM25GAH125D SEMITRANS® 6 IGBT Modules SKM25GAH125D Target Data Features VCE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x Icnom Fast & soft inverse CAL diodes Large clearance (10 mm) and creepage distances (20 mm) Isolated copper baseplate using DBC Technology (Direct Copper Bonding) UL recognized, file no. E63532 Typical Applications* DC/DC – converter Brake chopper Switched reluctance motor DC – motor Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 25 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 1 mA VGE = 0 V VCE = 1200 V Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 20 V Tj = 25 °C Values 1200 39 27 25 50 -20 ... 20 10 -55 ... 150 47 32 40 80 410 -40 ... 150 47 32 40 80 410 -40 ... 150 100...