SK35GD12T7ETE1

SK35GD12T7ETE1 SEMITOP®E1 Sixpack Open Emitter Engineering Sample SK35GD12T7ETE1 Target Data Features* Optimized design for superior thermal performance Low inductive design Press-Fit contact technology 1200V Generation 7 IGBT (T7) Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Motor drives Servo drives Air conditioning Auxiliary Inverters UPS Remarks Recommended Tj,op=-40 ...+150 °C Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Inverse - Diode IF λpaste=0.8 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IF λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IFRM IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj Module It(RMS) Tstg Visol , ∆Tterminal at PCB joint = 30 K, per pin module without TIM AC, sinusoidal, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 35 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 175 °C VCE0 Tj = 25 °C chiplevel Tj = 150 °C Tj = 175 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 175 °C VGE(th) VGE = VCE, IC = 0.75 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG VGE = -15V...+15V RGint Tj...