IGBT
SK35GD12T4ETE1
SEMITOP®E1
IGBT module
SK35GD12T4ETE1
Features*
• Low inductive design • Press-Fit contact technology • ...
Description
SK35GD12T4ETE1
SEMITOP®E1
IGBT module
SK35GD12T4ETE1
Features*
Low inductive design Press-Fit contact technology Rugged mounting due to integrated
mounting clamps Heat transfer and insulation through
direct copper bonded aluminium oxide ceramic (DBC) Trench4 IGBT technology Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532
Typical Applications
Motor drives Servo drives Air conditioning Auxiliary Inverters UPS
Absolute Maximum Ratings
Symbol Conditions
IGBT 1 VCES IC
IC
ICnom ICRM VGES
tpsc
Tj
Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
ICRM = 3 x ICnom
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 1 VRRM IF
IF
IFnom IFRM IFSM
Tj
Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
IFRM = 2 x IFnom 10 ms sin 180°
Tj = 25 °C Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Module It(RMS) Tstg Visol
∆Tterminal at PCB joint = 30 K, per pin AC, sinusoidal, t = 1 min
Values
1200 49 40 60 49 35 105
-20 ... 20
10
-40 ... 175
Values
1200 41 33 49 40 35 70 170 170
-40 ... 175
Values
30 -40 ... 125
2500
Unit
V A A A A A A V
µs
°C
Unit
V A A A A A A A A °C
Unit
A °C V
GD-ET
© by SEMIKRON
Rev. 1.0 – 24.04.2020
1
SK35GD12T4ETE1
SEMITOP®E1
IGBT module
SK35GD12T4ETE1
Features*
Low indu...
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