SK35GD12T4ETE1

SK35GD12T4ETE1 SEMITOP®E1 IGBT module SK35GD12T4ETE1 Features* Low inductive design Press-Fit contact technology Rugged mounting due to integrated mounting clamps Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC) Trench4 IGBT technology Robust and soft switching CAL4F diode technology Integrated NTC temperature sensor UL recognized file no. E 63 532 Typical Applications Motor drives Servo drives Air conditioning Auxiliary Inverters UPS Absolute Maximum Ratings Symbol Conditions IGBT 1 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Absolute Maximum Ratings Symbol Conditions Diode 1 VRRM IF IF IFnom IFRM IFSM Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C IFRM = 2 x IFnom 10 ms sin 180° Tj = 25 °C Tj = 150 °C Absolute Maximum Ratings Symbol Conditions Module It(RMS) Tstg Visol ∆Tterminal at PCB joint = 30 K, per pin AC, sinusoidal, t = 1 min Values 1200 49 40 60 49 35 105 -20 ... 20 10 -40 ... 175 Values 1200 41 33 49 40 35 70 170 170 -40 ... 175 Values 30 -40 ... 125 2500 Unit V A A A A A A V µs °C Unit V A A A A A A A A °C Unit A °C V GD-ET © by SEMIKRON Rev. 1.0 – 24.04.2020 1 SK35GD12T4ETE1 SEMITOP®E1 IGBT module SK35GD12T4ETE1 Features* Low indu...