IGBT
SK200GB12T4Tp
SEMITOP® 4 Press-Fit
IGBT module
Engineering Sample SK200GB12T4Tp Target Data Features
• One screw mounti...
Description
SK200GB12T4Tp
SEMITOP® 4 Press-Fit
IGBT module
Engineering Sample SK200GB12T4Tp Target Data Features
One screw mounting module Solder free mounting with Press-Fit
terminals Fully compatible with SEMITOP® 2 and
3 Press-Fit Improved thermal performances by
aluminum oxide substrate Trench4 IGBT technology CAL4F diode technology Integrated PTC temperature sensor UL recognized, file no. E 63 532
Typical Applications*
Switching SR Drives Inverter Switched mode power supplies UPS
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Ts = 25 °C Ts = 70 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse - Diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Ts = 25 °C Ts = 70 °C
IFnom IFRM IFSM Tj
IFRM = 3 x IFnom 10 ms, sin 180°, Tj = 150 °C
Module
It(RMS) Tstg Visol
Tterminal = 100 °C, TS = 60°C AC, sinusoidal, 50Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 200 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C Tj = 150 °C
VGE(th)
VGE = VCE, IC = 12 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies Coes Cres
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
QG
-8V...+15V
RGint
Tj = 25 °C
td(on) tr Eon td(off)
VCC = 600 V IC = 200 A RG on = 2 Ω RG off = 2 Ω
Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C
tf
Tj = 150 °C
Eoff
VGE = +15/-15 V Tj...
Similar Datasheet
- SK200GB12T4Tp IGBT - Semikron