Controlled Diode. D100E60 Datasheet

D100E60 Diode. Datasheet pdf. Equivalent

D100E60 Datasheet
Recommendation D100E60 Datasheet
Part D100E60
Description Fast Switching Emitter Controlled Diode
Feature D100E60; Fast Switching Emitter Controlled Diode IDW100E60 Features:  600V Emitter Controlled technology .
Manufacture Infineon
Datasheet
Download D100E60 Datasheet




Infineon D100E60
Fast Switching Emitter Controlled Diode
IDW100E60
Features:
600V Emitter Controlled technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175°C junction operating temperature
Easy paralleling
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models:
http://www.infineon.com
Applications:
Welding
Motor drives
PG-TO247-3
Type
IDW100E60
VRRM
600V
IF
100A
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
TC = 25C
TC = 90C
TC = 100C
Surge non repetitive forward current
TC = 25C, tp = 10 ms, sine halfwave
Maximum repetitive forward current
TC = 25C, tp limited by tj,max, D = 0.5
Power dissipation
TC = 25C
TC = 90C
TC = 100C
Operating junction temperature
Storage temperature
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
VF,Tj=25°C
1.65V
Tj,max
175C
Marking
D100E60
Package
PG-TO247-3
Symbol
VRRM
IF
IFSM
IFRM
Ptot
Tj
Tstg
TS
Value
Unit
600
V
150
104
A
96
400
A
300
A
375
W
212
198
-40…+175
-55...+150
°C
260
IFAG IPC TD VLS
1
Rev. 2.3 20.09.2013



Infineon D100E60
IDW100E60
Thermal Resistance
Parameter
Characteristic
Thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
0.40
K/W
40
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Diode forward voltage
VRRM
VF
Reverse leakage current
IR
IR=0.25mA
IF=100A
Tj=25C
Tj=175C
VR=600V
Tj=25C
Tj=175C
Dynamic Electrical Characteristics
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irr
Diode peak rate of fall of reverse
recovery current during tb
dIrr/dt
Tj=25C
VR=400V,
IF=100A,
dIF/dt=1200A/µs
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrrm
Irr
dIrr/dt
Tj=125C
VR=400V,
IF=100A,
dIF/dt=1200A/µs
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrrm
Irr
dIrr/dt
Tj=175C
VR=400V,
IF=100A,
dIF/dt=1200A/µs
min.
Value
typ.
Unit
max.
600
-
-V
-
1.65
2.0
-
1.65
-
A
-
-
40
-
-
3300
-
120
- ns
-
3.6
- µC
-
49.5
-A
-
750
- A/µs
-
168
- ns
-
5.8
- µC
-
61.6
-A
-
705
- A/µs
-
200
- ns
-
7.8
- µC
-
67.0
-A
-
650
- A/µs
IFAG IPC TD VLS
2
Rev. 2.3 20.09.2013



Infineon D100E60
IDW100E60
350W
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 1.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
150A
120A
90A
60A
30A
0A
25°C
75°C
125°C
Figure 2.
TC, CASE TEMPERATURE
Diode forward current as a
function of case temperature
(Tj 175C)
250A
200A
TJ=25°C
175°C
150A
100A
50A
0A
0V
1V
2V
VF, FORWARD VOLTAGE
Figure 3. Typical diode forward current as
a function of forward voltage
2.0V
1.5V
1.0V
IF=200A
100A
50A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 4. Typical diode forward voltage as a
function of junction temperature
IFAG IPC TD VLS
3
Rev. 2.3 20.09.2013







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