IGBT. SK50DGDL12T7ETE2 Datasheet

SK50DGDL12T7ETE2 IGBT. Datasheet pdf. Equivalent

SK50DGDL12T7ETE2 Datasheet
Recommendation SK50DGDL12T7ETE2 Datasheet
Part SK50DGDL12T7ETE2
Description IGBT
Feature SK50DGDL12T7ETE2; SK50DGDL12T7ETE2 SEMITOP®E2 3-phase Converter-Inverter-Brake (CIB) Engineering Sample SK50DGDL12T7E.
Manufacture Semikron
Datasheet
Download SK50DGDL12T7ETE2 Datasheet




Semikron SK50DGDL12T7ETE2
SK50DGDL12T7ETE2
SEMITOP®E2
3-phase
Converter-Inverter-Brake
(CIB)
Engineering Sample
SK50DGDL12T7ETE2
Target Data
Features*
• Optimized design for superior thermal
performance
• Low inductive design
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
• PEP rectifier diode technology for
enhanced power and environmental
robustness
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• Recommended Tj,op=-40 ...+150 °C
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 175 °C
Chopper - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 175 °C
Inverse - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Freewheeling - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Values
1200
64
52
79
64
50
100
-20 ... 20
7
-40 ... 175
1200
64
52
79
64
50
100
-20 ... 20
7
-40 ... 175
1200
41
33
49
39
100
170
-40 ... 175
1200
21
17
24
20
45
65
-40 ... 175
Unit
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
°C
DGDL-ET
© by SEMIKRON
Rev. 0.3 – 09.02.2021
1



Semikron SK50DGDL12T7ETE2
SK50DGDL12T7ETE2
SEMITOP®E2
3-phase
Converter-Inverter-Brake
(CIB)
Engineering Sample
SK50DGDL12T7ETE2
Target Data
Features*
• Optimized design for superior thermal
performance
• Low inductive design
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
• PEP rectifier diode technology for
enhanced power and environmental
robustness
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• Recommended Tj,op=-40 ...+150 °C
Absolute Maximum Ratings
Symbol Conditions
Rectifier - Diode
VRRM
IF
IF
IFSM
i2t
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
tp = 10 ms
sin 180°
tp = 10 ms
sin 180°
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Module
It(RMS)
Tstg
Visol
, Tterminal at PCB joint = 30 K, per pin
module without TIM
AC, sinusoidal, 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VCE0
rCE
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
VGE = VCE, IC = 1.27 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V...+15V
Tj = 25 °C
VCC = 600 V
IC = 50 A
RG on = 5.1 Ω
RG off = 5.1 Ω
VGE = +15/-15 V
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
(Tj = 150 °C)
Tj = 175 °C
Eon
di/dton = 990 A/µs Tj = 25 °C
di/dtoff = 440 A/µs
dv/dt = 4500 V/µs
Tj = 150 °C
Tj = 175 °C
Values
1600
76
59
93
73
520
350
1350
613
-40 ... 175
30
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
A2s
A2s
°C
A
°C
V
min.
typ.
max. Unit
1.58
1.74
V
1.78
2.03
V
1.82
2.09
V
0.90
1.00
V
0.75
0.83
V
0.72
0.80
V
14
15
mΩ
21
24
mΩ
22
26
mΩ
5.15
5.8
6.45
V
1
mA
9.9
nF
0.1265
nF
0.036
nF
798
nC
0
Ω
39
ns
40
ns
41
ns
37
ns
41
ns
42
ns
3.04
mJ
4.59
mJ
5.16
mJ
DGDL-ET
2
Rev. 0.3 – 09.02.2021
© by SEMIKRON



Semikron SK50DGDL12T7ETE2
SK50DGDL12T7ETE2
SEMITOP®E2
3-phase
Converter-Inverter-Brake
(CIB)
Engineering Sample
SK50DGDL12T7ETE2
Target Data
Features*
• Optimized design for superior thermal
performance
• Low inductive design
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
• PEP rectifier diode technology for
enhanced power and environmental
robustness
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• Recommended Tj,op=-40 ...+150 °C
Characteristics
Symbol Conditions
Inverter - IGBT
td(off)
tf
Eoff
VCC = 600 V
IC = 50 A
RG on = 5.1 Ω
RG off = 5.1 Ω
VGE = +15/-15 V
(Tj = 150 °C)
di/dton = 990 A/µs
di/dtoff = 440 A/µs
dv/dt = 4500 V/µs
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Chopper - IGBT
VCE(sat)
VCE0
IC = 50 A
VGE = 15 V
chiplevel
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
VGE = VCE, IC = 1.27 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V...+15V
Tj = 25 °C
Tj = 25 °C
Tj = 150 °C
tr
Eon
td(off)
tf
VCC = 600 V
IC = 50 A
RG on = 5.1 Ω
RG off = 5.1 Ω
VGE = +15/-15 V
(Tj = 150 °C)
di/dton = 990 A/µs
di/dtoff = 440 A/µs
dv/dt = 4500 V/µs
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Eoff
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
min.
typ.
max. Unit
204
ns
271
ns
281
ns
41
ns
65
ns
89
ns
3.21
mJ
5.28
mJ
5.59
mJ
0.94
K/W
0.66
K/W
1.58
1.74
V
1.78
2.03
V
1.82
2.09
V
0.90
1.00
V
0.75
0.83
V
0.72
0.80
V
14
15
mΩ
21
24
mΩ
22
26
mΩ
5.15
5.8
6.45
V
1
mA
9.9
nF
0.1265
nF
0.036
nF
798
nC
0
Ω
39
ns
40
ns
41
ns
37
ns
41
ns
42
ns
3.04
mJ
4.59
mJ
5.16
mJ
204
ns
271
ns
281
ns
41
ns
65
ns
89
ns
3.21
mJ
5.28
mJ
5.59
mJ
0.94
K/W
0.66
K/W
DGDL-ET
© by SEMIKRON
Rev. 0.3 – 09.02.2021
3







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