IGBT. SK50GD12T4ETE2 Datasheet

SK50GD12T4ETE2 IGBT. Datasheet pdf. Equivalent

SK50GD12T4ETE2 Datasheet
Recommendation SK50GD12T4ETE2 Datasheet
Part SK50GD12T4ETE2
Description IGBT
Feature SK50GD12T4ETE2; SK50GD12T4ETE2 SEMITOP®E2 IGBT module SK50GD12T4ETE2 Features* • Low inductive design • Press-Fit c.
Manufacture Semikron
Datasheet
Download SK50GD12T4ETE2 Datasheet




Semikron SK50GD12T4ETE2
SK50GD12T4ETE2
SEMITOP®E2
IGBT module
SK50GD12T4ETE2
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Servo drives
• Air conditioning
• Auxiliary Inverters
• UPS
Absolute Maximum Ratings
Symbol Conditions
IGBT 1
VCES
IC
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
ICRM = 3 x ICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 1
VRRM
IF
IF
IFnom
IFRM
IFSM
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFRM = 2 x IFnom
10 ms
sin 180°
Tj = 25 °C
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Module
It(RMS)
Tstg
Visol
Tterminal at PCB joint = 30 K, per pin
AC, sinusoidal, t = 1 min
Values
1200
65
53
82
67
50
150
-20 ... 20
10
-40 ... 175
Values
1200
56
45
69
55
50
100
270
270
-40 ... 175
Values
30
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
Unit
V
A
A
A
A
A
A
A
A
°C
Unit
A
°C
V
GD-ET
© by SEMIKRON
Rev. 1.0 – 13.01.2020
1



Semikron SK50GD12T4ETE2
SK50GD12T4ETE2
SEMITOP®E2
IGBT module
SK50GD12T4ETE2
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Servo drives
• Air conditioning
• Auxiliary Inverters
• UPS
Characteristics
Symbol Conditions
IGBT 1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 1.7 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V ... +15V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 50 A
VGE = +15/-15 V
RG on = 13 Ω
RG off = 13 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 2169 A/µs Tj = 150 °C
di/dtoff = 534 A/µs
dv/dt = 4035 V/µs Tj = 150 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Characteristics
Symbol Conditions
Diode 1
VF
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
Rth(j-s)
IF = 50 A
Tj = 25 °C
chiplevel
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 50 A
Tj = 150 °C
di/dtoff = 2169 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
min.
5
typ.
1.85
2.20
0.80
0.70
21
30
5.8
2.77
0.205
0.16
369
4.0
129
42
4.8
333
65
5
0.77
0.52
max. Unit
2.10
V
2.40
V
0.90
V
0.80
V
24
mΩ
32
mΩ
6.5
V
1
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
min.
typ.
max. Unit
2.22
2.54
V
2.18
2.50
V
1.30
1.50
V
0.90
1.10
V
18
21
mΩ
26
28
mΩ
70
A
7.01
µC
2.89
mJ
1.06
K/W
0.76
K/W
GD-ET
2
Rev. 1.0 – 13.01.2020
© by SEMIKRON



Semikron SK50GD12T4ETE2
SK50GD12T4ETE2
SEMITOP®E2
IGBT module
Characteristics
Symbol Conditions
Module
Ms
w
to heatsink
weight
min.
typ.
max. Unit
1.6
2.3
Nm
35
g
Characteristics
Symbol Conditions
Temperature Sensor
R100
Tr = 100 °C
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
min.
typ.
493 ± 5%
3550
±2%
max.
Unit
Ω
K
SK50GD12T4ETE2
Features*
• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated
mounting clamps
• Heat transfer and insulation through
direct copper bonded aluminium oxide
ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Servo drives
• Air conditioning
• Auxiliary Inverters
• UPS
GD-ET
© by SEMIKRON
Rev. 1.0 – 13.01.2020
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)