IGBT. SKiiP35ACC12F4V1 Datasheet

SKiiP35ACC12F4V1 IGBT. Datasheet pdf. Equivalent

SKiiP35ACC12F4V1 Datasheet
Recommendation SKiiP35ACC12F4V1 Datasheet
Part SKiiP35ACC12F4V1
Description IGBT
Feature SKiiP35ACC12F4V1; SKiiP 35ACC12F4V1 MiniSKiiP® 3 Twelvepack SKiiP 35ACC12F4V1 Features* • Fast Trench 4 IGBTs • Robus.
Manufacture Semikron
Datasheet
Download SKiiP35ACC12F4V1 Datasheet




Semikron SKiiP35ACC12F4V1
SKiiP 35ACC12F4V1
MiniSKiiP® 3
Twelvepack
SKiiP 35ACC12F4V1
Features*
• Fast Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532
Remarks
• Case temperature limited to TC=125°C
max.; TC = TS (for baseplateless
modules)
• Product reliability results valid for
Tj150°C (recommended
Tjop=-40...+150°C)
• Inverter IGBT: IGBT 1 - IGBT 12
• Inverse Diode: Diode 1 – Diode 12
• The creepage distance between
T-Sensor and DC- is 0,8mm (functional
isolation of T-sensor only up to 200V)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
ACC
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse - Diode
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 2 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
VGE = VCE, IC = 1.7 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
VGE = - 8 V...+ 15 V
RGint
td(on)
tr
Eon
td(off)
tf
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 50 A
RG on = 6.2 Ω
RG off = 0 Ω
di/dton = 2508 A/µs
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dtoff = 1082 A/µs Tj = 150 °C
Eoff
VGE = +15/-15 V Tj = 150 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Rev. 3.0 – 20.05.2020
Values
1200
54
43
62
50
50
150
-20 ... 20
10
-40 ... 175
58
46
65
52
50
100
270
-40 ... 175
40
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
A
A
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2.05
2.42
V
2.59
2.96
V
1.10
1.28
V
0.95
1.13
V
19
23
mΩ
33
37
mΩ
5.2
5.8
6.4
V
0.3
mA
2.77
nF
0.21
nF
0.16
nF
283
nC
4.0
Ω
28
ns
21
ns
4.8
mJ
234
ns
47
ns
3.4
mJ
0.87
K/W
0.69
K/W
1



Semikron SKiiP35ACC12F4V1
SKiiP 35ACC12F4V1
MiniSKiiP® 3
Twelvepack
SKiiP 35ACC12F4V1
Features*
• Fast Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532
Remarks
• Case temperature limited to TC=125°C
max.; TC = TS (for baseplateless
modules)
• Product reliability results valid for
Tj150°C (recommended
Tjop=-40...+150°C)
• Inverter IGBT: IGBT 1 - IGBT 12
• Inverse Diode: Diode 1 – Diode 12
• The creepage distance between
T-Sensor and DC- is 0,8mm (functional
isolation of T-sensor only up to 200V)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
Characteristics
Symbol Conditions
Inverse - Diode
VF = VEC
IF = 50 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-s)
Rth(j-s)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 50 A
Tj = 150 °C
di/dtoff = 2426 A/µs
VGE = +15/-15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Module
LCE
Ms
to heat sink
w
Temperature Sensor
R100
R(T)
Tr=100°C (R25=1000Ω)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2]
, A = 7.635*10-3°C-1,
B = 1.731*10-5°C-2
min.
2
typ.
2.22
2.18
1.30
0.90
18
26
90.1
8.25
3
1.02
0.84
-
82
1670 ±
3%
max. Unit
2.54
V
2.50
V
1.50
V
1.10
V
21
mΩ
28
mΩ
A
µC
mJ
K/W
K/W
nH
2.5
Nm
g
Ω
ACC
2
Rev. 3.0 – 20.05.2020
© by SEMIKRON



Semikron SKiiP35ACC12F4V1
SKiiP 35ACC12F4V1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 3.0 – 20.05.2020
3







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