IGBT. SKiiP34NAB12T7V1 Datasheet

SKiiP34NAB12T7V1 IGBT. Datasheet pdf. Equivalent

SKiiP34NAB12T7V1 Datasheet
Recommendation SKiiP34NAB12T7V1 Datasheet
Part SKiiP34NAB12T7V1
Description IGBT
Feature SKiiP34NAB12T7V1; SKiiP 34NAB12T7V1 MiniSKiiP® 3 3-phase Converter-Inverter-Brake (CIB) SKiiP 34NAB12T7V1 Features* •.
Manufacture Semikron
Datasheet
Download SKiiP34NAB12T7V1 Datasheet




Semikron SKiiP34NAB12T7V1
SKiiP 34NAB12T7V1
MiniSKiiP® 3
3-phase
Converter-Inverter-Brake
(CIB)
SKiiP 34NAB12T7V1
Features*
• 1200V Generation 7 IGBTs (T7)
• Robust and soft switching freewheeling
diodes in CAL technology
• New SKR PEP diode technology for
enhanced power and environmental
robustness
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532
Remarks
• Max. case temperature limited to
TC=TS=125 °C
• Product reliability results valid for
Tj150 °C (recommended
Tj,op=-40...+150 °C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
• For storage and case temperature with
TIM see document: “Technical
Explanations Thermal Interface
Materials”
• Inverter IGBT: T1 – T6
• Chopper IGBT: T14
• Inverse Diode: D1 – D6
• Freewheeling Diode: D13
• Rectifier Diode: D7 – D12
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 70 °C
Ts = 100 °C
IC
λpaste=2.5 W/(mK) Ts = 70 °C
Tj = 175 °C
Ts = 100 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 175 °C
Chopper - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 70 °C
Ts = 100 °C
IC
λpaste=2.5 W/(mK) Ts = 70 °C
Tj = 175 °C
Ts = 100 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 175 °C
Inverse - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 70 °C
Ts = 100 °C
IF
λpaste=2.5 W/(mK) Ts = 70 °C
Tj = 175 °C
Ts = 100 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Freewheeling - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 70 °C
Ts = 100 °C
IF
λpaste=2.5 W/(mK) Ts = 70 °C
Tj = 175 °C
Ts = 100 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Values
1200
45
36
50
41
35
70
-20 ... 20
7
-40 ... 175
1200
45
36
50
41
35
70
-20 ... 20
7
-40 ... 175
1200
35
28
39
32
70
170
-40 ... 175
1200
35
28
39
32
70
170
-40 ... 175
Unit
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
°C
NAB
© by SEMIKRON
Rev. 1.0 – 09.10.2020
1



Semikron SKiiP34NAB12T7V1
SKiiP 34NAB12T7V1
MiniSKiiP® 3
3-phase
Converter-Inverter-Brake
(CIB)
SKiiP 34NAB12T7V1
Features*
• 1200V Generation 7 IGBTs (T7)
• Robust and soft switching freewheeling
diodes in CAL technology
• New SKR PEP diode technology for
enhanced power and environmental
robustness
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532
Remarks
• Max. case temperature limited to
TC=TS=125 °C
• Product reliability results valid for
Tj150 °C (recommended
Tj,op=-40...+150 °C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
• For storage and case temperature with
TIM see document: “Technical
Explanations Thermal Interface
Materials”
• Inverter IGBT: T1 – T6
• Chopper IGBT: T14
• Inverse Diode: D1 – D6
• Freewheeling Diode: D13
• Rectifier Diode: D7 – D12
Absolute Maximum Ratings
Symbol Conditions
Rectifier - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 70 °C
Ts = 100 °C
IF
λpaste=2.5 W/(mK) Ts = 70 °C
Tj = 175 °C
Ts = 100 °C
IFSM
tp = 10 ms
sin 180°
Tj = 25 °C
Tj = 150 °C
i2t
tp = 10 ms
Tj = 25 °C
sin 180°
Tj = 150 °C
Tj
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
module without TIM
Visol
AC sinus 50 Hz, 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 35 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VCE0
rCE
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
VGE = VCE, IC = 0.75 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8V ... + 15 V
Tj = 25 °C
VCC = 600 V
IC = 35 A
RG on = 9.1 Ω
RG off = 9.1 Ω
VGE = +15/-15 V
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Eon
@ Tj = 150 °C:
di/dton = 860 A/µs
di/dtoff = 380 A/µs
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
dv/dt = 3610 V/µs Tj = 175 °C
Values
1600
53
42
59
47
370
270
685
365
-40 ... 175
80
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
A2s
A2s
°C
A
°C
V
min.
typ.
max. Unit
1.60
1.75
V
1.82
1.96
V
1.86
2.00
V
0.90
1.00
V
0.75
0.83
V
0.72
0.80
V
20
21
mΩ
31
32
mΩ
33
34
mΩ
5.15
5.8
6.45
V
1
mA
6.60
nF
0.09
nF
0.02
nF
490
nC
0
Ω
37
ns
39
ns
40
ns
37
ns
43
ns
46
ns
2.8
mJ
4
mJ
4.2
mJ
NAB
2
Rev. 1.0 – 09.10.2020
© by SEMIKRON



Semikron SKiiP34NAB12T7V1
SKiiP 34NAB12T7V1
MiniSKiiP® 3
3-phase
Converter-Inverter-Brake
(CIB)
SKiiP 34NAB12T7V1
Features*
• 1200V Generation 7 IGBTs (T7)
• Robust and soft switching freewheeling
diodes in CAL technology
• New SKR PEP diode technology for
enhanced power and environmental
robustness
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532
Remarks
• Max. case temperature limited to
TC=TS=125 °C
• Product reliability results valid for
Tj150 °C (recommended
Tj,op=-40...+150 °C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
• For storage and case temperature with
TIM see document: “Technical
Explanations Thermal Interface
Materials”
• Inverter IGBT: T1 – T6
• Chopper IGBT: T14
• Inverse Diode: D1 – D6
• Freewheeling Diode: D13
• Rectifier Diode: D7 – D12
Characteristics
Symbol Conditions
Inverter - IGBT
td(off)
tf
Eoff
VCC = 600 V
IC = 35 A
RG on = 9.1 Ω
RG off = 9.1 Ω
VGE = +15/-15 V
@ Tj = 150 °C:
di/dton = 860 A/µs
di/dtoff = 380 A/µs
dv/dt = 3610 V/µs
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
Chopper - IGBT
VCE(sat)
VCE0
IC = 35 A
VGE = 15 V
chiplevel
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
VGE = VCE, IC = 0.75 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8V ... + 15 V
Tj = 25 °C
Tj = 25 °C
Tj = 150 °C
tr
Eon
td(off)
tf
VCC = 600 V
IC = 35 A
RG on = 9.1 Ω
RG off = 9.1 Ω
VGE = +15/-15 V
@ Tj = 150 °C:
di/dton = 860 A/µs
di/dtoff = 380 A/µs
dv/dt = 3610 V/µs
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Eoff
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Rth(j-s)
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
per IGBT, λpaste=2.5 W/(mK)
min.
typ.
max. Unit
231
ns
321
ns
346
ns
48
ns
74
ns
90
ns
2.3
mJ
3.9
mJ
4.2
mJ
1.02
K/W
0.85
K/W
1.60
1.75
V
1.82
1.96
V
1.86
2.00
V
0.90
1.00
V
0.75
0.83
V
0.72
0.80
V
20
21
mΩ
31
32
mΩ
33
34
mΩ
5.15
5.8
6.45
V
1
mA
6.60
nF
0.09
nF
0.02
nF
490
nC
0
Ω
37
ns
39
ns
40
ns
37
ns
43
ns
46
ns
2.8
mJ
4
mJ
4.2
mJ
231
ns
321
ns
346
ns
48
ns
74
ns
90
ns
2.3
mJ
3.9
mJ
4.2
mJ
1.02
K/W
0.85
K/W
NAB
© by SEMIKRON
Rev. 1.0 – 09.10.2020
3







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