P-Channel MOSFET. Si3443DV Datasheet

Si3443DV MOSFET. Datasheet pdf. Equivalent

Si3443DV Datasheet
Recommendation Si3443DV Datasheet
Part Si3443DV
Description P-Channel MOSFET
Feature Si3443DV; Si3443DV Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel .
Manufacture ON Semiconductor
Datasheet
Download Si3443DV Datasheet




ON Semiconductor Si3443DV
Si3443DV
P-Channel 2.5V Specified PowerTrenchMOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
Features
• -4 A, -20 V. RDS(ON) = 0.065 @ VGS = -4.5 V
RDS(ON) = 0.100 @ VGS = -2.5 V
• Fast switching speed.
• Low gate charge (7.2nC typical).
• High performance trench technology for extremely
low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
D
1
D
2
G
D
SuperSOT TM-6 D
3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
6
5
4
Ratings
-20
±8
-4
-20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.443
Si3443DV
7’’
78
30
Tape Width
8mm
°C/W
°C/W
Quantity
3000 units
2001 Semiconductor Components Industries, LLC.
September-2017, Rev.1
Publication Order Number:
Si3443DV/D



ON Semiconductor Si3443DV
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-20
V
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = -250 µA, Referenced to 25°C
VDS = -16 V, VGS = 0 V
-16
mV/°C
-1
µA
IGSSF
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
100 nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
-100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = -250 µA
-0.4 -0.7
ID = -250 µA, Referenced to 25°C
2.5
-1.5
V
mV/°C
VGS = -4.5 V, ID = -4 A
0.054 0.065
VGS = -4.5 V, ID = -4 A, TJ=125°C
0.076 0.105
VGS = -2.5 V, ID = -3.2 A
0.077 0.100
VGS = -4.5 V, VDS = -5 V
-10
A
VDS = -5 V, ID = -4 A
9
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V
f = 1.0 MHz
640
pF
180
pF
90
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 2)
VDD = -10 V, ID = -1 A
VGS = -4.5 V, RGEN = 6
VDS = -10 V, ID = -4 A
VGS = -4.5 V,
11 20
ns
19 30
ns
26 42
ns
35 55
ns
7.2 10
nC
1.7
nC
1.6
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-1.3
A
-0.75 -1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper.
b) 156° C/W when mounted on a minimum pad of 2 oz.copper.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
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ON Semiconductor Si3443DV
Typical Characteristics
20
VGS = -4.5V
-3.5V
-3.0V
15
-2.5V
10
-2.0V
5
-1.5V
0
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
ID = - 4A
1.4
VGS = - 4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = -5V
8
6
TA = -55oC
25oC
125oC
4
2
0
0.4
0.8
1.2
1.6
2
2.4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.6
VGS = -2.5V
1.4
-3.0V
1.2
-3.5V
-4.0V
-4.5V
1
0.8
0
4
8
12
16
20
- ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.25
0.2
0.15
0.1
0.05
0
1
ID = -2A
TA = 125oC
TA = 25oC
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
T = 125oC
25oC
-55oC
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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