IGBT. SKiiP26GH12T4V11 Datasheet

SKiiP26GH12T4V11 IGBT. Datasheet pdf. Equivalent

SKiiP26GH12T4V11 Datasheet
Recommendation SKiiP26GH12T4V11 Datasheet
Part SKiiP26GH12T4V11
Description IGBT
Feature SKiiP26GH12T4V11; SKiiP 26GH12T4V11 MiniSKiiP® 2 H-bridge inverter SKiiP 26GH12T4V11 Features • Trench 4 IGBTs • Robu.
Manufacture Semikron
Datasheet
Download SKiiP26GH12T4V11 Datasheet




Semikron SKiiP26GH12T4V11
SKiiP 26GH12T4V11
MiniSKiiP® 2
H-bridge inverter
SKiiP 26GH12T4V11
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Single phase inverter
Remarks
• Case temperature limited to TC=125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj150°C (recommended
Top=-40...+150°C)
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse - Diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tstg
Tterminal = 80 °C, 20A per spring
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 70 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
VGE = VCE, IC = 2 mA
ICES
VGE = 0 V
Tj = 25 °C
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
td(off)
tf
Eoff
VCC = 600 V
Tj = 150 °C
IC = 75 A
Tj = 150 °C
RG on = 9.1
RG off = 9.1
di/dton = 1820 A/µs
Tj = 150 °C
Tj = 150 °C
di/dtoff = 900 A/µs Tj = 150 °C
VGE = +15/-15 V Tj = 150 °C
Rth(j-s)
per IGBT
Values
1200
90
73
70
210
-20 ... 20
10
-40 ... 175
83
66
75
225
430
-40 ... 175
100
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.85
2.10
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
15
17
m
22
24
m
5
5.8
6.5
V
0.1
0.3
mA
mA
3.90
nF
0.31
nF
0.23
nF
400
nC
0.00
26
ns
36
ns
9.5
mJ
320
ns
175
ns
7.1
mJ
0.55
K/W
GH
© by SEMIKRON
Rev. 0 – 14.10.2013
1



Semikron SKiiP26GH12T4V11
SKiiP 26GH12T4V11
MiniSKiiP® 2
H-bridge inverter
SKiiP 26GH12T4V11
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Single phase inverter
Remarks
• Case temperature limited to TC=125°C
max.; TC = TS (valid for baseplateless
modules)
• Product reliability results valid for
Tj150°C (recommended
Top=-40...+150°C)
Characteristics
Symbol Conditions
Inverse - Diode
VF = VEC
IF = 75 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-s)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 75 A
Tj = 150 °C
di/dtoff = 2120 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per Diode
Module
Ms
to heat sink
w
Temperature Sensor
R100
R(T)
Tr=100°C (R25=1000)
R(T)=1000[1+A(T-25°C)+B(T-25°C)2
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
min.
2
typ.
2.2
2.1
1.3
0.9
12
16
80
13.3
5.6
0.75
55
1670 ±
3%
max. Unit
2.5
V
2.4
V
1.5
V
1.1
V
13
m
18
m
A
µC
mJ
K/W
2.5
Nm
g
GH
2
Rev. 0 – 14.10.2013
© by SEMIKRON



Semikron SKiiP26GH12T4V11
SKiiP 26GH12T4V11
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 14.10.2013
3







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