IGBT. SK75GD12T4Tp Datasheet

SK75GD12T4Tp IGBT. Datasheet pdf. Equivalent

SK75GD12T4Tp Datasheet
Recommendation SK75GD12T4Tp Datasheet
Part SK75GD12T4Tp
Description IGBT
Feature SK75GD12T4Tp; SK 75 GD 12T4 Tp SEMITOP® 4 Press-Fit IGBT module Engineering Sample SK 75 GD 12T4 Tp Features • On.
Manufacture Semikron
Datasheet
Download SK75GD12T4Tp Datasheet




Semikron SK75GD12T4Tp
SK 75 GD 12T4 Tp
SEMITOP® 4 Press-Fit
IGBT module
Engineering Sample
SK 75 GD 12T4 Tp
Features
• One screw mounting module
• Solder free mounting with Press-Fit
terminals
• Fully compatible with other SEMITOP®
Press-Fit types
• Improved thermal performances by
aluminium oxide substrate
• Trench4 IGBT technology
• CAL4F technology FWD
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
Typical Applications*
• Inverter up to 36kVA
• Typical motor power 22kW
Absolute Maximum Ratings
Symbol Conditions
IGBT 1
VCES
IC
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
ICRM = 3 x ICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 1
VRRM
IF
IF
IFnom
IFRM
IFSM
Tj
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Module
It(RMS)
Tstg
Visol
Tterminal = 100 °C, TS = 60°C, per pin
AC, sinusoidal, t = 1 min
Values
1200
87
67
97
79
75
225
-20 ... 20
10
-40 ... 175
Values
1200
74
55
83
66
75
150
430
-40 ... 175
Values
40
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
Unit
V
A
A
A
A
A
A
A
°C
Unit
A
°C
V
GD-T
© by SEMIKRON
Rev. 2.0 – 17.07.2017
1



Semikron SK75GD12T4Tp
SK 75 GD 12T4 Tp
SEMITOP® 4 Press-Fit
IGBT module
Engineering Sample
SK 75 GD 12T4 Tp
Features
• One screw mounting module
• Solder free mounting with Press-Fit
terminals
• Fully compatible with other SEMITOP®
Press-Fit types
• Improved thermal performances by
aluminium oxide substrate
• Trench4 IGBT technology
• CAL4F technology FWD
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
Typical Applications*
• Inverter up to 36kVA
• Typical motor power 22kW
GD-T
2
Characteristics
Symbol Conditions
IGBT 1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
IC = 75 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 3 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -7V...+15V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 75 A
RG on = 24 Ω
RG off = 24 Ω
di/dton = 1360 A/µs
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dtoff = 1360 A/µs Tj = 150 °C
VGE neg = -7 V
VGE pos = 15 V
Tj = 150 °C
per IGBT
Characteristics
Symbol Conditions
Diode 1
VF
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
IF = 75 A
Tj = 25 °C
chiplevel
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 75 A
Tj = 150 °C
di/dtoff = 1360 A/µs
VGE = -7 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
min.
5
typ.
1.85
2.25
0.80
0.70
14
21
5.8
-
4.4
0.29
0.235
425
10
63
65
13.6
521
80
8.2
0.51
max. Unit
2.10
V
2.45
V
0.90
V
0.80
V
16
mΩ
22
mΩ
6.5
V
0.87
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
min.
typ.
max. Unit
2.17
2.49
V
2.11
2.42
V
1.30
1.50
V
0.90
1.10
V
12
13
mΩ
16
18
mΩ
41
A
10.6
µC
3.38
mJ
0.75
K/W
Characteristics
Symbol Conditions
Module
Ms
w
to heatsink
weight
min.
typ.
max. Unit
2.5
2.75
Nm
60
g
Characteristics
Symbol Conditions
Temperature Sensor
R100
Tr = 100 °C
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
min.
typ.
493 ± 5%
3550
±2%
max.
Unit
Ω
K
Rev. 2.0 – 17.07.2017
© by SEMIKRON



Semikron SK75GD12T4Tp
SK 75 GD 12T4 Tp
Fig. 1: Typ. IGBT1 output characteristic, incl. RCC'+ EE'
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 7: Typ. switching times vs. IC
© by SEMIKRON
Rev. 2.0 – 17.07.2017
3







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