IGBT
SKM100GAL12F4
SEMITRANS® 2
High Speed IGBT4 Modules
SKM100GAL12F4
Features*
• High speed trench and field-stop IGBT • C...
Description
SKM100GAL12F4
SEMITRANS® 2
High Speed IGBT4 Modules
SKM100GAL12F4
Features*
High speed trench and field-stop IGBT CAL4 ultra-fast = soft switching 4.
generation CAL-diode Insulated copper baseplate using DBC
technology (Direct Bonded Copper) Increased power cycling capability For higher switching frequencies above
15kHz UL recognized, file no. E63532
Typical Applications
Electronic welders DC/DC – converter Brake chopper Switched reluctance motor
Remarks
Case temperature limited to Tc = 125°C max.
Recommended Top = -40 ... +150°C Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 2 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
module without TIM
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint
IC = 100 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 3.8 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE...
Similar Datasheet
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