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SK120GAL12F4T

Semikron

IGBT

SK120GAL12F4T SEMITOP® 3 Boost Chopper SK120GAL12F4T Features* • One screw mounting module • Low inductive design • Hea...


Semikron

SK120GAL12F4T

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Description
SK120GAL12F4T SEMITOP® 3 Boost Chopper SK120GAL12F4T Features* One screw mounting module Low inductive design Heat transfer and insulation through direct copper bonded aluminum oxide ceramic (DBC) 1200V Trench4 IGBT (F4) Robust and soft switching freewheeling diode CAL4F Integrated NTC temperature sensor UL recognized, file no. E 63 532 Typical Applications Solar UPS Energy Storage Systems Remarks Chopper Diode: antiparallel diode Absolute Maximum Ratings Symbol Conditions Chopper IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM VGES tpsc Tj VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Chopper Diode VRRM IF Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C IFRM IFSM 10 ms, sin 180°, Tj = 150 °C Tj Freewheeling Diode VRRM IF Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C IFRM IFSM 10 ms, sin 180°, Tj = 150 °C Tj Module It(RMS) Tstg ∆Tterminal at PCB joint = 30 K, per pin Visol AC, sinusoidal, t = 1 min Characteristics Symbol Conditions Chopper IGBT VCE(sat) IC = 120 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 chiplevel Tj = 25 °C Tj = 150 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE(th) VGE = VCE, IC = 4.5 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG VGE = - 15 V...+ 15 V RGint Tj = 25 °C Values 1200 134 109 120 240 -20 ... 20 10 -40 ... 175 1200 60 47 270 -40 ... 175 1200 148 117 240 774 -40 ... 1...




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