IGBT
SK120GAL12F4T
SEMITOP® 3
Boost Chopper
SK120GAL12F4T
Features*
• One screw mounting module • Low inductive design • Hea...
Description
SK120GAL12F4T
SEMITOP® 3
Boost Chopper
SK120GAL12F4T
Features*
One screw mounting module Low inductive design Heat transfer and insulation through direct copper bonded aluminum oxide
ceramic (DBC) 1200V Trench4 IGBT (F4) Robust and soft switching freewheeling
diode CAL4F Integrated NTC temperature sensor UL recognized, file no. E 63 532
Typical Applications
Solar UPS Energy Storage Systems
Remarks
Chopper Diode: antiparallel diode
Absolute Maximum Ratings
Symbol Conditions
Chopper IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Ts = 25 °C Ts = 70 °C
ICnom ICRM VGES
tpsc
Tj
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Chopper Diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Ts = 25 °C Ts = 70 °C
IFRM
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
Freewheeling Diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Ts = 25 °C Ts = 70 °C
IFRM
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS) Tstg
∆Tterminal at PCB joint = 30 K, per pin
Visol
AC, sinusoidal, t = 1 min
Characteristics
Symbol Conditions
Chopper IGBT
VCE(sat)
IC = 120 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C Tj = 150 °C
VGE(th)
VGE = VCE, IC = 4.5 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies Coes Cres
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
QG
VGE = - 15 V...+ 15 V
RGint
Tj = 25 °C
Values
1200 134 109 120 240 -20 ... 20
10
-40 ... 175
1200 60 47 270
-40 ... 175
1200 148 117 240 774 -40 ... 1...
Similar Datasheet
- SK120GAL12F4T IGBT - Semikron