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SKiiP39GA12T4V1 Dataheets PDF



Part Number SKiiP39GA12T4V1
Manufacturers Semikron
Logo Semikron
Description IGBT
Datasheet SKiiP39GA12T4V1 DatasheetSKiiP39GA12T4V1 Datasheet (PDF)

SKiiP 39GA12T4V1 MiniSKiiP® 3 IGBT module SKiiP 39GA12T4V1 Features • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) • Please refer to MiniSKiiP “Technical Explanations” and “Mounting Instructions” for further information GA © by SEMIKRON Absolut.

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SKiiP 39GA12T4V1 MiniSKiiP® 3 IGBT module SKiiP 39GA12T4V1 Features • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) • Please refer to MiniSKiiP “Technical Explanations” and “Mounting Instructions” for further information GA © by SEMIKRON Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C IC λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C ICnom ICRM ICRM = 3 x ICnom VGES tpsc Tj VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse - Diode IF λpaste=0.8 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IF λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IFnom IFRM IFRM = 3 x IFnom IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj Module It(RMS) Tterminal = 80 °C, 20 A per spring Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 chiplevel Tj = 25 °C Tj = 150 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE(th) VGE = VCE, IC = 6 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG - 8 V...+ 15 V RGint td(on) tr Eon td(off) tf Tj = 25 °C VCC = 600 V Tj = 150 °C IC = 150 A RG on = 1 Ω RG off = 1 Ω di/dton = 2840 A/µs Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dtoff = 1880 A/µs Tj = 150 °C Eoff VGE = +15/-15 V Tj = 150 °C Rth(j-s) Rth(j-s) per IGBT, λpaste=0.8 W/(mK) per IGBT, λpaste=2.5 W/(mK) Rev. 2.0 – 28.08.2017 Values 1200 167 135 217 177 150 450 -20 ... 20 10 -40 ... 175 136 107 163 130 150 450 900 -40 ... 175 160 -40 ... 125 2500 Unit V A A A A A A V µs °C A A A A A A A °C A °C V min. typ. max. Unit 1.85 2.10 V 2.25 2.45 V 0.80 0.90 V 0.70 0.80 V 7.0 8.0 mΩ 10 11 mΩ 5 5.8 6.5 V 0.1 0.3 mA 8.80 nF 0.58 nF 0.47 nF 850 nC 5.0 Ω 165 ns 50 ns 22.5 mJ 390 ns 80 ns 14 mJ 0.33 K/W 0.21 K/W 1 SKiiP 39GA12T4V1 MiniSKiiP® 3 IGBT module SKiiP 39GA12T4V1 Features • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) • Please refer to MiniSKiiP “Technical Explanations” and “Mounting Instructions” for further information Characteristics Symbol Conditions Inverse - Diode VF = VEC IF = 150 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-s) Rth(j-s) chiplevel Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 4020 A/µs VGE = +15/-15 V VCC = 600 V Tj = 150 °C Tj = 150 °C per Diode, λpaste=0.8 W/(mK) per Diode, λpaste=2.5 W/(mK) Module LCE Ms to heat sink w Temperature Sensor R100 R(T) Tr=100°C (R25=1000Ω) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2 ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 min. 2 typ. 2.14 2.07 1.30 0.90 5.6 7.8 188 27 11.4 0.52 0.39 - 82 1670 ± 3% max. Unit 2.46 V 2.38 V 1.50 V 1.10 V 6.4 mΩ 8.5 mΩ A µC mJ K/W K/W nH 2.5 Nm g Ω GA 2 Rev. 2.0 – 28.08.2017 © by SEMIKRON SKiiP 39GA12T4V1 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2.0 – 28.08.2017 3 SKiiP 39GA12T4V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2.0 – 28.08.2017 © by SEMIKRON SKiiP 39GA12T4V1 pinout, dimensions pinout © by SEMIKRON Rev. 2.0 – 28.08.2017 5 SKiiP 39GA12T4V1 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Applicat.


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