Document
SKiiP 39GA12T4V1
MiniSKiiP® 3
IGBT module
SKiiP 39GA12T4V1 Features
• Trench 4 IGBTs • Robust and soft freewheeling diodes in
CAL technology • Highly reliable spring contacts for
electrical connections • UL recognised: File no. E63532
Remarks
• Max. case temperature limited to TC=125°C
• Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C)
• Please refer to MiniSKiiP “Technical Explanations” and “Mounting Instructions” for further information
GA © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES IC
Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse - Diode
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 150 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C Tj = 150 °C
VGE(th)
VGE = VCE, IC = 6 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies Coes Cres
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
QG
- 8 V...+ 15 V
RGint td(on) tr Eon td(off) tf
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 150 A RG on = 1 Ω RG off = 1 Ω di/dton = 2840 A/µs
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dtoff = 1880 A/µs Tj = 150 °C
Eoff
VGE = +15/-15 V Tj = 150 °C
Rth(j-s) Rth(j-s)
per IGBT, λpaste=0.8 W/(mK) per IGBT, λpaste=2.5 W/(mK)
Rev. 2.0 – 28.08.2017
Values
1200 167 135 217 177 150 450 -20 ... 20
10
-40 ... 175
136 107 163 130 150 450 900 -40 ... 175
160 -40 ... 125
2500
Unit
V A A A A A A V
µs
°C
A A A A A A A °C
A °C V
min.
typ.
max. Unit
1.85
2.10
V
2.25
2.45
V
0.80
0.90
V
0.70
0.80
V
7.0
8.0
mΩ
10
11
mΩ
5
5.8
6.5
V
0.1
0.3
mA
8.80
nF
0.58
nF
0.47
nF
850
nC
5.0
Ω
165
ns
50
ns
22.5
mJ
390
ns
80
ns
14
mJ
0.33
K/W
0.21
K/W
1
SKiiP 39GA12T4V1
MiniSKiiP® 3
IGBT module
SKiiP 39GA12T4V1
Features
• Trench 4 IGBTs • Robust and soft freewheeling diodes in
CAL technology • Highly reliable spring contacts for
electrical connections • UL recognised: File no. E63532
Remarks
• Max. case temperature limited to TC=125°C
• Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C)
• Please refer to MiniSKiiP “Technical Explanations” and “Mounting Instructions” for further information
Characteristics
Symbol Conditions
Inverse - Diode
VF = VEC
IF = 150 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr Err Rth(j-s) Rth(j-s)
chiplevel
Tj = 25 °C Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 4020 A/µs VGE = +15/-15 V VCC = 600 V
Tj = 150 °C Tj = 150 °C
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Module
LCE
Ms
to heat sink
w
Temperature Sensor
R100 R(T)
Tr=100°C (R25=1000Ω) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2 ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2
min. 2
typ.
2.14 2.07 1.30 0.90 5.6 7.8 188 27 11.4 0.52 0.39
-
82
1670 ± 3%
max. Unit
2.46
V
2.38
V
1.50
V
1.10
V
6.4
mΩ
8.5
mΩ
A
µC
mJ
K/W K/W
nH
2.5
Nm
g
Ω
GA 2
Rev. 2.0 – 28.08.2017
© by SEMIKRON
SKiiP 39GA12T4V1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2.0 – 28.08.2017
3
SKiiP 39GA12T4V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2.0 – 28.08.2017
© by SEMIKRON
SKiiP 39GA12T4V1
pinout, dimensions
pinout
© by SEMIKRON
Rev. 2.0 – 28.08.2017
5
SKiiP 39GA12T4V1
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Applicat.