IGBT
SKiM301TMLI12E4B
SKiM® 4
Trench IGBT Modules
SKiM301TMLI12E4B
Features
• IGBT 4 Trench Gate Technology • Solder technol...
Description
SKiM301TMLI12E4B
SKiM® 4
Trench IGBT Modules
SKiM301TMLI12E4B
Features
IGBT 4 Trench Gate Technology Solder technology VCE(sat) with positive temperature
coefficient Low inductance case Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate Pressure contact technology for
thermal contacts Spring contact system to attach driver
PCB to the control terminals High short circuit capability, self limiting
to 6 x IC Integrated temperature sensor
Typical Applications*
Automotive inverter High reliability AC inverter wind High reliability AC inverter drives
Remarks
Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules)
Recommended Top = -40 … +150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT 1 VCES IC
IC
ICnom ICRM VGES
tpsc
Tj
Tj = 25 °C Tj = 150 °C
Tj = 175 °C
ICRM = 3 x ICnom
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
IGBT 2 VCES IC
IC
ICnom ICRM VGES
tpsc
Tj
Tj = 25 °C Tj = 150 °C
Tj = 175 °C
ICRM = 2 x ICnom
VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Module It(RMS) Tstg Visol
Tterminal = 80 °C, AC sinus 50 Hz, t = 1 min
Values
1200 279 213 311 252 300 900 -20 ... 20
10
-40 ... 175
Values
650 221 164 248 197 300 600 -20 ... 20
10
-40 ... 175
Values
400 -40 ... 125
2500
Unit
V A A A A A A V
µs
°C
Unit
V A A A A A A V
µ...
Similar Datasheet
- SKiM301TMLI12E4B IGBT - Semikron
- SKiM301TMLI12E4C IGBT - Semikron