Document
SKM450GB12E4D1
SEMITRANS® 3
IGBT4 Modules
SKM450GB12E4D1 Features*
• IGBT4 = 4th generation medium fast trench IGBT (Infineon)
• CAL4 = Soft switching 4th generation CAL-diode
• Insulated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability • With integrated gate resistor • For higher switching frequencies up to
12kHz • UL recognized, file no. E63532 • SKM…D1: increased diode
performance
Typical Applications
• AC inverter drives • UPS
Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C • Product reliability results valid
for Tj = 150°C
GB © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
module without TIM AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
IC = 450 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 16.4 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 450 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 8100 A/µs Tj = 150 °C
di/dtoff = 3400 A/µs
Tj = 150 °C
Rth(j-c) Rth(c-s)
Rth(c-s)
per IGBT per IGBT (λgrease=0.81 W/(m*K)) per IGBT, pre-applied phase change material
Rev. 1.0 – 11.09.2019
Values
1200 699 538 450 1350 -20 ... 20
10
-40 ... 175
1200 623 466 500 1000 2736 -40 ... 175
500 -40 ... 125
4000
Unit
V A A A A V
µs
°C
V A A A A A °C
A °C V
min. 5
typ.
1.84 2.23 0.80 0.70 2.3 3.4 5.8
27.2 1.76 1.50 2500 1.9 253 59 28 505 112
58
0.028
0.017
max. Unit
2.07
V
2.42
V
0.90
V
0.80
V
2.6
mΩ
3.6
mΩ
6.5
V
5
mA
nF
nF
nF
nC
Ω ns ns mJ ns ns
mJ
0.062 K/W K/W
K/W
1
SKM450GB12E4D1
SEMITRANS® 3
IGBT4 Modules
SKM450GB12E4D1
Features*
• IGBT4 = 4th generation medium fast trench IGBT (Infineon)
• CAL4 = Soft switching 4th generation CAL-diode
• Insulated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability • With integrated gate resistor • For higher switching frequencies up to
12kHz • UL recognized, file no. E63532 • SKM…D1: increased diode
performance
Typical Applications
• AC inverter drives • UPS
Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C • Product reliability results valid
for Tj = 150°C
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 450 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr Err Rth(j-c)
chiplevel
Tj = 25 °C Tj = 150 °C
IF = 450 A
Tj = 150 °C
di/dtoff = 8000 A/µs VGE = -15 V VCC = 600 V
Tj = 150 °C Tj = 150 °C
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Rth(c-s)
per diode, pre-applied phase change material
Module LCE RCC'+EE'
Rth(c-s)1 Rth(c-s)2
Rth(c-s)2
Ms Mt
measured per switch
TC = 25 °C TC = 125 °C
calculated without thermal coupling
including thermal coupling, Ts underneath module (λgrease=0.81 W/(m*K)) including thermal coupling, Ts underneath module, pre-applied phase change material
to heat sink M6
to terminals M6
w
min.
3 2.5
typ.
max. Unit
2.04 1.94 1.30 0.90 1.64 2.3 504 75 31
0.037
0.03
2.35
V
2.23
V
1.50
V
1.10
V
1.88 mΩ
2.5
mΩ
A
µC
mJ
0.095 K/W K/W
K/W
15
nH
0.55
mΩ
0.85
mΩ
0.008
K/W
0.013
K/W
0.009
K/W
5
Nm
5
Nm
Nm
325
g
GB 2
Rev. 1.0 – 11.09.2019
© by SEMIKRON
SKM450GB12E4D1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1.0 – 11.09.2019
3
SKM450GB12E4D1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 1.0 – 11.09.2019
© by SEMIKRON
SKM450GB12E4D1
SEMITRANS 3
GB
© by SEMIKRON
Rev. 1.0 – 11.09.2019
5
SKM450GB12E4D1
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guara.