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SKM450GB12E4D1 Dataheets PDF



Part Number SKM450GB12E4D1
Manufacturers Semikron
Logo Semikron
Description IGBT
Datasheet SKM450GB12E4D1 DatasheetSKM450GB12E4D1 Datasheet (PDF)

SKM450GB12E4D1 SEMITRANS® 3 IGBT4 Modules SKM450GB12E4D1 Features* • IGBT4 = 4th generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4th generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequencies up to 12kHz • UL recognized, file no. E63532 • SKM…D1: increased diode performance Typical Applications • AC inverter drives • UPS Remarks • Case .

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SKM450GB12E4D1 SEMITRANS® 3 IGBT4 Modules SKM450GB12E4D1 Features* • IGBT4 = 4th generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4th generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequencies up to 12kHz • UL recognized, file no. E63532 • SKM…D1: increased diode performance Typical Applications • AC inverter drives • UPS Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C GB © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol module without TIM AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 16.4 mA VGE = 0 V, VCE = 1200 V, Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V Tj = 150 °C IC = 450 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 8100 A/µs Tj = 150 °C di/dtoff = 3400 A/µs Tj = 150 °C Rth(j-c) Rth(c-s) Rth(c-s) per IGBT per IGBT (λgrease=0.81 W/(m*K)) per IGBT, pre-applied phase change material Rev. 1.0 – 11.09.2019 Values 1200 699 538 450 1350 -20 ... 20 10 -40 ... 175 1200 623 466 500 1000 2736 -40 ... 175 500 -40 ... 125 4000 Unit V A A A A V µs °C V A A A A A °C A °C V min. 5 typ. 1.84 2.23 0.80 0.70 2.3 3.4 5.8 27.2 1.76 1.50 2500 1.9 253 59 28 505 112 58 0.028 0.017 max. Unit 2.07 V 2.42 V 0.90 V 0.80 V 2.6 mΩ 3.6 mΩ 6.5 V 5 mA nF nF nF nC Ω ns ns mJ ns ns mJ 0.062 K/W K/W K/W 1 SKM450GB12E4D1 SEMITRANS® 3 IGBT4 Modules SKM450GB12E4D1 Features* • IGBT4 = 4th generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4th generation CAL-diode • Insulated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequencies up to 12kHz • UL recognized, file no. E63532 • SKM…D1: increased diode performance Typical Applications • AC inverter drives • UPS Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Characteristics Symbol Conditions Inverse diode VF = VEC IF = 450 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 150 °C IF = 450 A Tj = 150 °C di/dtoff = 8000 A/µs VGE = -15 V VCC = 600 V Tj = 150 °C Tj = 150 °C per diode Rth(c-s) per diode (λgrease=0.81 W/(m*K)) Rth(c-s) per diode, pre-applied phase change material Module LCE RCC'+EE' Rth(c-s)1 Rth(c-s)2 Rth(c-s)2 Ms Mt measured per switch TC = 25 °C TC = 125 °C calculated without thermal coupling including thermal coupling, Ts underneath module (λgrease=0.81 W/(m*K)) including thermal coupling, Ts underneath module, pre-applied phase change material to heat sink M6 to terminals M6 w min. 3 2.5 typ. max. Unit 2.04 1.94 1.30 0.90 1.64 2.3 504 75 31 0.037 0.03 2.35 V 2.23 V 1.50 V 1.10 V 1.88 mΩ 2.5 mΩ A µC mJ 0.095 K/W K/W K/W 15 nH 0.55 mΩ 0.85 mΩ 0.008 K/W 0.013 K/W 0.009 K/W 5 Nm 5 Nm Nm 325 g GB 2 Rev. 1.0 – 11.09.2019 © by SEMIKRON SKM450GB12E4D1 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1.0 – 11.09.2019 3 SKM450GB12E4D1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1.0 – 11.09.2019 © by SEMIKRON SKM450GB12E4D1 SEMITRANS 3 GB © by SEMIKRON Rev. 1.0 – 11.09.2019 5 SKM450GB12E4D1 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guara.


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