IGBT
SKiM459GD12E4V2
SKiM® 93
Trench IGBT Modules
SKiM459GD12E4V2 Features
• IGBT 4 Trench Gate Technology • Solderless sint...
Description
SKiM459GD12E4V2
SKiM® 93
Trench IGBT Modules
SKiM459GD12E4V2 Features
IGBT 4 Trench Gate Technology Solderless sinter technology VCE(sat) with positive temperature
coefficient Low inductance case Insulated by Al2O3 DBC (Direct Bonded
Copper) ceramic substrate Pressure contact technology for
thermal contacts Spring contact system to attach driver
PCB to the control terminals High short circuit capability, self limiting
to 6 x IC Integrated temperature sensor Improved power cycle capability of
diodes due to AlCu-bond wires
Typical Applications*
Automotive inverter High reliability AC inverter wind High reliability AC inverter drives
Remarks
Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules)
Recommended Top = -40 … +150°C
GD © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES IC
Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse - Diode
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tterminal = 80 °C,
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 450 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 15...
Similar Datasheet
- SKiM459GD12E4 IGBT - Semikron International
- SKiM459GD12E4V2 IGBT - Semikron